一种具有部分高介电常数介质调制效应的IGBT  

An IGBT with Partial High Permittivity Dielectric Modulation

作　　者：陈为真 程骏骥 CHEN Weizhen;CHENG Junji(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微电子学》2021年第2期246-250,共5页Microelectronics

基　　金：国家自然科学基金青年基金资助项目(61604030)。

摘　　要：提出了一种具有高介电常数介质填充沟槽的绝缘栅双极晶体管(IGBT)。分析了高介电常数介质调制效应。结果表明,与普通场阻型IGBT相比,该器件的击穿电压提高了8%,通态压降减小了8%,关断损耗降低了11%;在相同通态压降下,该器件的关断损耗降低了35%。在栅极与原HK介质之间增加介电常数更高的介质,进一步提升了该IGBT的性能。与普通场阻型IGBT相比,在相同击穿电压与通态压降下,改进器件的关断损耗降低了57%。An Insulated Gate Bipolar Transistor(IGBT) with a trench filled with high permittivity dielectric was presented. The effect of high permittivity dielectric modulation was analyzed. The results showed that, compared with the field stop IGBT, the breakdown voltage of the proposed device was increased by 8%, the on-state voltage and turn-off loss were decreased by 8% and 11%, respectively. At the same on-state voltage drop, the turn-off loss of the device was reduced by 35%. Moreover, by adding another dielectric between gate and the previous HK dielectric, the performance of the proposed device could be enhanced further. Compared with the common field stop IGBT, the turn-off loss of the modified device was reduced by 57% at the same breakdown voltage and on-state voltage drop.

关 键 词：绝缘栅双极晶体管 高介电常数 关断损耗 功率器件 

分 类 号：TN322.8[电子电信—物理电子学]