90 nm PDSOI MOSFET热阻研究  

Study on Thermal Resistance of 90 nm PDSOI MOSFETs

作　　者：李垌帅 王芳 王可为[1,2,3] 卜建辉 韩郑生[1,2,3] 罗家俊 LI Tongshuai;WANG Fang;WANG Kewei;BU Jianhui;HAN Zhengsheng;LUO Jiajun(Univ.of Chinese Academyof Sci.,Beijing 100049,P.R.China;Institute of Microelec.,Chinese Academyof Sci.,Bejing 100029,P.R.China;Key Lab.of Silicon Dev.and Technol.,Chinese Academyof Sci,Beijing 100029,P.R.China)

机构地区：[1]中国科学院大学,北京100049 [2]中国科学院微电子研究所,北京100029 [3]中国科学院硅器件技术重点实验室,北京100029

出　　处：《微电子学》2021年第2期251-254,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61874135)。

摘　　要：对90 nm PDSOI MOSFET的热阻进行了提取与研究。以H型栅MOSFET为研究对象,将源体二极管作为温度敏感器,通过测量源体结电流与器件温度的关系以及源体结电流与器件功率的关系,获得MOS器件功率与器件温度的关系,从而获取MOS器件热阻值。实验结果表明,该工艺下PMOS器件的热阻比NMOS器件大,其原因是PMOS体区掺杂浓度比NMOS高,而掺杂浓度越高,导热性越差,热阻就越大;H型栅器件的归一化热阻随沟道宽度的增加而增大,其原因是随着沟道宽度的增加,体引出区域对器件导热的贡献变小;热阻随环境温度的上升而减小,其原因是二氧化硅埋氧层的导热率随温度的升高而增大。The thermal resistance of the 90 nm H-gate PDSOI MOSFET was investigated. The source-body diode was used as the thermometer, and the thermal resistance was obtained by measuring the relationship between the junction current and temperature, and the relationship between the junction current and MOS device power. The experimental results showed that the thermal resistance of the PMOS was larger than that of the NMOS in this technology. The reason was that the doping concentration in the body region of the PMOS was higher than that of the NMOS, and the thermal resistance increased with the increase of the doping concentration. Due to the contribution of the body-tied region to the heat conduction was decreased, the normalized thermal resistance of the H-gate device increased with the increase of the channel width. Since the thermal conductivity of SiO2 increased with temperature, the thermal resistance decreased with the increasing ambient temperature.

关 键 词：部分耗尽SOI 自加热效应 热阻 源体二极管法 H型栅 

分 类 号：TN386[电子电信—物理电子学]