基于DNA介电层的全印刷晶体管存储器的制备及性能分析  

Preparation and Performance of All-Printed Transistor Memory Based on DNA Gate Dielectric

作　　者：汪苏云 何文娟 曹荣 黄蓓青[1] 魏先福[1] 张改梅[1] 王东栋 梁丽娟 WANG Su-yun;HE Wen-juan;CAO Rong;HUANG Bei-qing;WEI Xian-fu;ZHANG Gai-mei;WANG Dong-dong;LIANG Li-juan(School of Printing and Packaging Engineering,Beijing Institute of Graphic Communication,Beijing 102600,China)

机构地区：[1]北京印刷学院印刷与包装工程学院,北京102600

出　　处：《数字印刷》2021年第2期97-103,共7页Digital Printing

基　　金：北京市自然科学基金(No.2202018);北京市教委科技计划一般项目(No.KM202010015004);国家自然科学基金(No.21604005)。

摘　　要：有机场效应晶体管(OTFT)存储器因具有质轻、低成本、可溶液加工、可在柔性衬底上大面积制备等特点,在存储卡和传感器等方面具有广阔的应用前景。本研究通过离子交换法制备了脱氧核糖核酸-十八烷基三甲基氯化铵(DNA-OTMA)脂质复合物,对其物化性能进行表征,将其作为栅极介电层构建了全印刷晶体管存储器阵列。实验结果表明,该存储器载流子迁移率为0.65cm^(2)V^(-1)s^(-1)、存储窗口为13V、开关比超过104。本研究为印刷制备高性能大规模柔性OTFT存储器和实现各类集成电子器件提供了新思路。The organic field-effect transistor(OTFT)memory has the characteristics of light weight,low cost,solution processed,and large-area preparation on a flexible substrate,which has broad application prospects in memory cards and sensors.In this study,the DNA-OTMA(deoxyribonucleic acid-hexadecyltrimethylammonium chloride)lipid complex was prepared by ion exchange reaction,its physical and chemical properties were characterized.Fully printed memory arrays were fabricated based on DNA-OTMA as the gate dielectric layer.The experimental results suggested that the memory has a carrier mobility of 0.65cm^(2)V^(-1)s^(-1),a storage window of 13V and an ON/OFF ratio exceeding 104,which provide a new idea for the preparation of high-performance OTFT memory on large-scale flexible substrate and the realization of various integrated electronic devices.

关 键 词：DNA复合物 非易失性存储器 印刷技术 

分 类 号：Q523[生物学—生物化学] TS801.1[轻工技术与工程]