基于田口方法的混合集成基板CMP工艺优化研究  

Study on Optimization of CMP Process for Hybrid Integrated Substrate Based on Taguchi Method

作　　者：谢迪 李浩[1] 王从香[1] 侯清健[1] 崔凯[1] XIE Di;LI Hao;WANG Congxiang;HOU Qingjian;CUI Kai(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China)

机构地区：[1]南京电子技术研究所,江苏南京210039

出　　处：《电子机械工程》2021年第3期55-58,共4页Electro-Mechanical Engineering

摘　　要：为了提高多芯片组件(Multi-Chip Module,MCM-C/D)技术中低温共烧陶瓷(Low Temperature Cofired Ceramic,LTCC)基板的表面质量,需要采用化学机械抛光(Chemical Mechanical Polishing,CMP)工艺使基板表面平坦化。文中探讨了基于田口试验方法的基板CMP工艺参数优化设计方法。在一定的抛光条件下,抛光液pH值、抛光载荷和抛光盘转速是影响基板表面质量的主要工艺参数。文中设计了3因素3水平试验进行研究。研究结果表明,基板表面CMP平坦化的影响因素依次是抛光载荷、抛光液pH值和抛光盘转速。采用优化参数获得了光洁、平整的表面,基板粗糙度Ra≤0.05μm,浆料凸起高度H≤3μm,经薄膜工艺验证,满足厚薄膜混合基板的研制应用需求。In order to improve the surface quality of low temperature co-fired ceramic(LTCC)substrate in multi-chip module(MCM-C/D)technology,it is necessary to use chemical mechanical polishing(CMP)process to flatten the substrate surface.This paper discusses the optimization design method of substrate CMP process parameters based on Taguchi test method.Under certain polishing conditions,pH value of polishing slurry,polishing load and rotation rate of platen are the main process parameters that affect the surface quality of substrate.Experiment with three factors and three levels is designed to study these parameters.The results show that the factors affecting the CMP planarization of substrate surface are polishing load,p H value of polishing slurry and rotation rate of platen in sequence.The optimized parameters are adopted to obtain a smooth and flat surface with the substrate roughness Ra≤0.05μm and the bulging height H≤3μm,which meets the application requirements of thick and thin film hybrid substrate after the validation of film process.

关 键 词：化学机械抛光 混合集成基板 粗糙度 选择比 田口方法 参数优化 

分 类 号：TN405[电子电信—微电子学与固体电子学]