HVPE法制备碳掺杂半绝缘氮化镓晶圆片  

C-doped Semi-insulating GaN Grown by HVPE

作　　者：赖云 罗晓菊 王现英[1,2] Lai Yun;Luo Xiaoju;Wang Xianying(University of Shanghai for Science and Technology,Schoo1 of Material Science&Engineering,Shanghai 200093;Eta Research Ltd.,Shanghai 201306,China)

机构地区：[1]上海理工大学材料科学与工程学院,上海200093 [2]镓特半导体科技(上海)有限公司,上海201306

出　　处：《广东化工》2021年第9期13-15,共3页Guangdong Chemical Industry

基　　金：国家自然科学基金(62071300,62071300);上海市科学技术委员会(18511110600,19 zr1435200);上海市教委创新项目(2019-01-07-00-07-E00015);上海学术研究领导人项目(19XD1422900);上海经济和信息化委员会(GYQJ-2019-1-23)。

摘　　要：利用氢化物气相外延法(HVPE)生长,以甲烷为掺杂源,成功制备获得四英寸自支撑半绝缘氮化镓(GaN)晶圆片。所使用掺杂气体为浓度为5%的甲烷气体,混合于N_(2)载气中。所制备晶圆片厚度可达800μm以上,表面无裂纹,表明粗糙度在0.6 nm以下。(002)和(102)晶面X射线衍射摇摆曲线的半峰宽均小于100 arcsec,普遍在为40~60 arcsec,曲率半径可达20 m及以上,位错密度低于10^(6)/cm^(2),测得电阻率大于10^(9)Ω-cm。Four-inch self-separated semi-insulating gallium nitride(GaN)wafers were successfully obtained by Hydride Vaper Phase Epitaxy(HVPE)growth with methane as the doping source.The doping gas used is methane gas with a concentration of 5%,mixed with N_(2) carrier gas.The thickness of the wafer can reach more than 800μm,and the surface roughness is lower than 0.6 nm without cracks.(002)and(102)of the X-ray diffraction rocking curve half peak width of less than100 arcsec typically were 40 to 60 arcsec,curvature radius is more than 20 m,the dislocation density is lower than 10^(6)/cm^(2),the resistivity was measured to be greater than 10^(9)Ω-cm.

关 键 词：氢化物气向外延 氮化镓 晶体生长 碳掺杂 晶圆片 

分 类 号：TQ[化学工程]