快速热退火对InGaAsSb/AlGaAsSb多量子阱材料发光特性的影响  

Effect of Rapid Thermal Annealing on Luminescence Properties of InGaAsSb/AlGaAsSb Multiple Quantum Wells Material

作　　者：申琳 唐吉龙 贾慧民 王登魁 房丹 方铉 林逢源 魏志鹏 Shen Lin;Tang Jilong;Jia Huimin;Wang Dengkui;Fang Dan;Fang Xuan;Lin Fengyuan;Wei Zhipeng(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun,Jilin 130022,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《中国激光》2021年第7期188-195,共8页Chinese Journal of Lasers

基　　金：国家自然科学基金(61574022,61674021,11674038,61704011,61904017);高功率半导体激光器国家重点实验室基金、长春理工大学青年基金(XQNJJ-2018-18)。

摘　　要：I型InGaAsSb/AlGaAsSb量子阱是1.8~3μm波段锑化物半导体激光器的首选材料,为进一步提升分子束外延生长的InGaAsSb/AlGaAsSb量子阱材料的光学性能,本文对其进行了快速热退火处理,通过光致发光光谱研究了快速热退火对量子阱材料光致发光特性的影响。光致发光光谱测试结果表明,快速热退火会使量子阱结构中垒层、阱层异质界面处的原子互扩散,改善量子阱材料的晶体质量,促使结构释放应力,进而提高了量子阱材料的光学性能。随着退火温度升高,量子阱材料的室温光致发光谱峰位逐渐蓝移,在500,550,600℃退火后,量子阱材料光致发光谱的峰位分别蓝移了7,8,9 meV。通过变温及变功率光致发光光谱测试,确认了样品发光峰的来源,位于0.687 eV的发光峰为局域载流子的复合,位于0.701 eV的发光峰为自由激子的复合。对不同退火温度的样品进一步研究后发现,退火温度的升高降低了材料中局域态载流子复合的比例,在600℃退火温度下局域载流子与自由激子的强度比值降为500℃退火温度下的22.6%,这表明合适温度的快速热退火处理可以有效改善量子阱材料的光致发光特性。Objective In recent years,Ⅲ-Ⅴ semiconductor materials have been widely used in optoelectronic devices,such as lasers,detectors,and LEDs,and have attracted widespread attention of researchers.Among these materials,the band gap of the InGaAsSb/AlGaAsSb quantum well structure is between that of GaSb and InAs.Therefore,the InGaAsSb/AlGaAsSb quantum well structure is the preferred material for the preparation of antimonide semiconductor lasers with a wavelength range of 1.8--3μm.In molecular beam epitaxial(MBE)growth of antimony alloy semiconductor materials,defects and molecular clusters are introduced.These defects reduce the light-emitting characteristics of the materials,affecting the threshold current,output power,and spectral line width of the laser.In order to further improve the optical properties of InGaAsSb/AlGaAsSb quantum well materials,a rapid thermal annealing method is used to treat the quantum well structure.The effects of rapid thermal annealing on the performance of quantum wells are studied here using photoluminescence spectroscopy.Methods An InGaAsSb/AlGaAsSb quantum well structure is grown using a DCA-P600 MBE system.A GaSb buffer layer with a thickness of 500 nm is first grown on an n-type GaAs substrate.Then,three periods of In_(0.1)Ga_(0.9)As_(0.08)Sb_(0.92)/Al_(0.3)Ga_(0.7)As_(0.13)Sb_(0.87) are grown on the buffer layer.The thickness of the In_(0.1)Ga_(0.9)As_(0.08)Sb_(0.92) well layer is 20 nm and the thickness of the Al0.3Ga0.7As0.13Sb0.87 barrier layer is 30 nm.The as-grown sample is cleaved into four pieces of equal size.One of the samples is designated as the as-grown sample and does not undergo rapid thermal annealing.The other three samples are subjected to rapid thermal annealing for 30 s in a nitrogen atmosphere at either 500℃,550℃,or 600℃.A laser with a wavelength of 655 nm and spot area of 0.4 cm^(2) is used to measure the photoluminescence spectrum of the samples.A HORIBA iHR550 spectrometer,with an InGaAs detector kept at-30℃,is used to detect photoluminescence signa

关 键 词：光谱学 光致发光 InGaAsSb/AlGaAsSb 量子阱 快速热退火 局域态 

分 类 号：O433.4[机械工程—光学工程] O472.3[理学—光学]