清洗工艺对AlN单晶抛光片表面有机沾污的影响  

Effect of Cleaning Process on Organic Contamination on Surfaces of AlN Sin gle Crystal Polished Wafers

作　　者：徐世海[1] 边子夫 高飞[1] 张丽[1] 程红娟[1] 王健[1] 李晖[1] Xu Shihai;Bian Zifu;Gao Fei;Zhang Li;Cheng Hongjuan;Wang Jian;Li Hui(The 46^(th) Research Institute,China Electronics Technology Group Corporation,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《微纳电子技术》2021年第5期452-457,共6页Micronanoelectronic Technology

摘　　要：研究了化学机械抛光(CMP)后AlN单晶片的清洗。将除蜡剂清洗法、RCA清洗法、食人鱼溶液清洗法以及丙酮和异丙醇(IPA)的混合溶液清洗法等进行组合,对抛光后的AlN单晶片表面进行超声清洗,并通过微分干涉显微镜、原子力显微镜(AFM)及光电子能谱仪(XPS)对清洗效果进行了表征,并分析了不同清洗方法对有机沾污的去除效果。实验结果表明,RCA清洗法清洗后晶片表面残留的有机沾污的含量最低,而食人鱼溶液清洗法可显著减小有机颗粒的尺寸,除蜡剂与丙酮和异丙醇的混合溶液对有机沾污的去除效果相近。优化的清洗工艺以丙酮和异丙醇的混合溶液作为初步清洗溶液,随后依次对晶片进行食人鱼溶液清洗和RCA清洗,应用此优化工艺清洗后的AlN单晶片表面颗粒较少,C—H键、C=O键和C—OH键的百分比分别为75.5%、20.4%和4.1%,表面粗糙度为0.069 2 nm。The cleaning of AlN sin gle crystal wafers after chemical mechanical polishing(CMP) was researched. The surface of the AlN sin gle crystal wafer was cleaned with ultrasound by combining the cleaning methods, such as the wax remover, RCA cleaning, piranha solution cleaning and mixed solution cleaning of acetone and isopropanol(IPA). The cleaning effect was characterized by the differential interference microscope, atomic force microscope(AFM) and X-ray photoelectron spectrometer(XPS), and the removal effect of the organic contamination by different cleaning methods was analyzed. The experiment results show that the content of the residual organic contamination on the surface of the wafer cleaned by the RCA cleaning method is the least, and the particle size can be dramatically reduced by the piranha solution cleaning method. The removal effect of the wax remover is close to that of the mixed solution of acetone and IPA. With the mixed solution of acetone and IPA as the initial cleaning solution for the optimized cleaning process, the wafers were cleaned by the piranha solution cleaning method and RCA cleaning method in sequence. The particle number on the surface of the AlN wafer cleaned with the optimized process is less, the percentage of C—H, C=O and C—OH is 75.5%, 20.4% and 4.1%, respectively, and the surface roughness of the AlN wafer is 0.069 2 nm.

关 键 词：氮化铝(AlN)单晶 除蜡剂 食人鱼溶液清洗法 RCA清洗法 化学机械抛光(CMP) 有机沾污 

分 类 号：TN305.2[电子电信—物理电子学] TN304.23