英寸级少层MoS_(2)薄膜的低温可控制备  

Controllable Preparation of Inch-Size MoS_(2) Few-Layer Thin Films at Low Temperature

作　　者：郭才胜 吴隽[1] 牛犇 熊芬 祝柏林[1] 黄成斌 刘静[1] GUO Caisheng;WU Jun;NIU Ben;XIONG Fen;ZHU Bailin;HUANG Chengbin;LIU Jing(The State Key Laboratory of Refractories and Metallurgy,Faculty of Materials and Metallurgy,Wuhan University of Science and Technology,Wuhan 430081,China)

机构地区：[1]武汉科技大学材料与冶金学院,省部共建耐火材料与冶金国家重点实验室,武汉430081

出　　处：《材料导报》2021年第12期12039-12043,共5页Materials Reports

摘　　要：大面积二硫化钼(MoS_(2))薄膜的可控制备是其走向应用的关键环节,尤其是少层及P型电导的MoS_(2),对于器件应用具有重要意义,但鲜有文献报道。本工作采用室温射频(RF)磁控溅射法,在玻璃衬底上制备了英寸级的少层MoS_(2)薄膜,并经低温退火,实现了大面积较高质量的MoS_(2)薄膜可控制备。原子力显微镜(AFM)、拉曼光谱(Raman)、X射线光电子能谱(XPS)、高分辨透射电子显微镜(HRTEM)和紫外可见吸收光谱(UV-vis)分析结果表明:所制得的大面积超薄薄膜为3层的多晶膜,厚度约2.2 nm,且均匀、平整、可控,薄膜结晶性好、稳定性高。使用同样的工艺在Si/SiO_(2)基片上制备少层MoS_(2)薄膜,并将其制成背栅场效应晶体管(TFT),电学表征表明该薄膜呈现P型导电特征,载流子迁移率为0.183 cm^(2)·V^(-1)·s^(-1)。本工作提供了一种大面积少层MoS_(2)薄膜的可控制备方法,而且制备温度低,工艺简单且兼容性强,易实现大规模工业化生产。The controllable preparation of large area molybdenum disulfide(MoS_(2))thin film is the key to its application,especially the MoS_(2) with few layers and p-type conductivity,which is of great significance for the device application,but few literatures have been reported.In this paper,inch sized few-layer MoS_(2) thin films were prepared successfully and controllably on glass substrate through room-temperature radio frequency(RF)magnetron sputtering deposition combined with sulfuration annealing at low temperature.The results of atomic force microscopy(AFM),Raman spectroscopy(Raman),X-ray photoelectron spectroscopy(XPS),high-resolution transmission electron microscopy(HRTEM)and ultraviolet visible absorption spectroscopy(UV-vis)show that the large area ultra-thin MoS_(2) film is composed of polycrystalline three-layer,of which the thickness is of about 2.2 nm.The film is uniform,flat,controllable and with good crystallinity and high stability.The few-layer MoS_(2) film were prepared on the Si/SiO_(2) substrate by the same process,a back-gate field effect transistor(TFT)with P-type conductivity and carrier mobility of 0.183 cm^(2)·V^(-1)·s^(-1) is achieved.The proposed synthesis progress with a characteristic of simpleness and low-temperature is suitable for industrial large-scale production,and paves a selectable way for facile and efficient preparing few-and mono-layer MoS_(2) film with large-area.

关 键 词：MoS_(2) 低温硫化退火 大面积制备 场效应晶体管 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TQ136.12[化学工程—无机化工]