高靶材利用率高镀膜均匀性条形溅射靶的设计与实现  

Design and realization of high utilization and high uniformity strip sputtering target

作　　者：陈长平 佘鹏程 陈峰武 程文进 陈庆广 CHEN Chang-ping;SHE Peng-cheng;CHEN Feng-wu;CHENG Wen-jing;CHEN Qing-guang(The 48th Research Institute of CETC)

机构地区：[1]中国电子科技集团公司第四十八研究所

出　　处：《中国集成电路》2021年第7期70-73,共4页China lntegrated Circuit

摘　　要：针对传统条形磁控溅射靶磁场分布不理想、靶材利用率低、镀膜不均匀等不足,通过优化磁场分布,缩小条形靶端部与中部的磁场差距,增大靶材的刻蚀均匀性,增大有效镀膜区,从而提高靶材利用率和改善镀膜均匀性。本文结合模拟仿真、结构设计与工艺验证的方式,开发出一种镀膜均匀性优于3%、靶材利用率超过30%的条形磁控溅射靶。In view of the shortcomings of the traditional strip magnetron sputtering target,such as the magnetic field distribution is not ideal,the waste rate of the target material is large,the coating is not uniform and so on.By optimizing the magnetic field distribution,the difference of the magnetic field between the end of the strip target and the middle of the strip target is reduced,the etch uniformity of the target is increased,and the effective coating area is enlarged,thus the utilization ratio of the target and the coating uniformity are improved.In this paper,a strip magnetron sputtering target with coating uniformity better than 3%and target material utilization over 30%has been developed by means of simulation,structure design and process verification.

关 键 词：磁控溅射 镀膜均匀性 靶材利用率 薄膜混合集成电路 

分 类 号：TG174.4[金属学及工艺—金属表面处理]