4H-SiC结势垒肖特基二极管电子辐照效应测试分析  

Test Analysis of Electron Irradiation Effects in 4H-SiC Junction Barrier Schottky Diodes

作　　者：刘超铭[1,2] 肖一平 王天琦[1] 张庆豪 王祖军[3] 李何依 冯绍辉 齐春华[1] 张延清[1] 马国亮[1] 霍明学[1] LIU Chao-ming;XIAO Yi-ping;WANG Tian-qi;ZHANG Qing-hao;WANG Zu-jun;LI He-yi;FENG Shao-hui;QI Chun-hua;ZHANG Yan-qing;MA Guo-liang;HUO Ming-xue(Space Environment Simulation Research Infrastructure,Harbin Institute of Technology,Harbin 150001,China;School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China;Beijing Microelectronics Technology Institute,Beijing 100076,China)

机构地区：[1]哈尔滨工业大学,空间环境与物质科学研究院,哈尔滨150001 [2]哈尔滨工业大学材料科学与工程学院,哈尔滨150001 [3]西北核技术研究所,西安710024 [4]北京微电子技术研究所,北京100076

出　　处：《现代应用物理》2021年第2期69-75,共7页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11775061,61704039,61771167,11805045);强脉冲辐射环境模拟与效应国家重点实验室专项经费资助项目(SKLIPR1912)。

摘　　要：采用1 MeV电子辐照,开展了4H-SiC结势垒肖特基二极管(JBS)空间电子辐照效应测试分析。测试结果表明,随着辐照电子注量的增加,JBS的正向特性逐渐退化,串联电阻逐渐增加;电子注量为5×10^(14) cm^(-2)时,反向漏电流在高反向电压下有所增加;电子注量为5×10^(15) cm^(-2)时,反向漏电流明显降低;自由载流子浓度随辐照注量的增加而降低,载流子去除率约为0.37 cm^(-1)。通过对辐照前后的SiC外延片材料级辐照缺陷分析结果表明,电子辐照会在4H-SiC中引入体缺陷,如碳间隙原子、碳空位及其他复合缺陷;在较小注量下,辐照缺陷浓度随着辐照注量的增加而增加;当辐照注量超过5×10^(14) cm^(-2)时,出现了缺陷信号的淬灭现象。In this paper,the space electron irradiation effect of 4H-SiC junction barrier Schottky diode(JBS)irradiated by 1 MeV electron is measured and analyzed.The results show that the forward characteristics of 4H-SiC JBS gradually degrades and the series resistance gradually increases with the increase of radiation fluence.The reverse leakage current increases at a high reverse voltage when the electron fluence is 5×10^(14) cm^(-2),when the electron fluence is 5×10^(15) cm^(-2),the reverse leakage current decreases obviously.Based on the C-V curve,the free carrier concentration decreases with the increase of electron fluence,and the carrier removal rate is about 0.37 cm^(-1).The results show that bulk defects such as carbon interstitial atoms,carbon vacancies,and other composite defects will be introduced into 4H-SiC by electron irradiation.When the irradiation fluence exceeds 5×10^(14) cm^(-2),the defect signal is quenched.The above experimental results can provide a research basis for the research on radiation damage and mechanism of 4H-SiC JBS in space environment,and provide the necessary data and theoretical basis for the space application of SiC based devices and radiation hardened technology.

关 键 词：4H-SIC 结势垒肖特基二极管 光致发光 电子辐照 辐射效应 

分 类 号：TN306[电子电信—物理电子学]