α-In_(2)Se_(3)基光电晶体管的^(60)Co γ射线辐射效应及应变调控  

^(60)Co γ-Ray Radiation Effect and Strain Regulation on α-In_(2)Se_(3)-Based Phototransistor

作　　者：陈芸 杨振 陈巧 周滤康 蒋明峰 钟晴 CHEN Yun;YANG Zhen;CHEN Qiao;ZHOU Lyu-kang;JIANG Ming-feng;ZHONG Qing(State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Xi’an 710024,China;School of Materials Science and Engineering,Xiangtan University,Xiangtan 411105,China)

机构地区：[1]强脉冲辐射环境模拟与效应国家重点实验室,西安710024 [2]湘潭大学材料科学与工程学院,湘潭411105

出　　处：《现代应用物理》2021年第2期100-108,共9页Modern Applied Physics

基　　金：强脉冲辐射环境模拟与效应国家重点实验室专项基金资助项目(SKLIPR2019)。

摘　　要：利用微机械剥离法制备了α-In_(2)Se_(3)基柔性晶体管,本文研究了该晶体管在60Coγ射线辐照至吸收剂量为100 krad(Si)时的光电性能,基于对α-In_(2)Se_(3)纳米片元素组成、表面形貌、声子模式及畴结构的精细表征,分析了γ射线辐照该晶体管的损伤机制,并研究了通过弯曲引入的面内应变对光电性能的调控作用,通过计算载流子浓度的变化,探讨了应变调控光电性能的机理。结果表明,γ射线辐照诱导产生的缺陷可能是导致α-In_(2)Se_(3)基柔性光电晶体管性能退化的主要原因;在压缩应变为-0.402%、光功率密度为14.34 mW·cm^(-2)时,辐照后α-In_(2)Se_(3)基柔性晶体管的光响应性为辐照后无应变时的8.26倍,证明静态应变调控是提高辐照环境下基于2维铁电材料光电探测器光响应性能的有效途径。α-In_(2)Se_(3)-based flexible transistor is fabricated by micromechanical peeling method,and the photoelectric response of α-In_(2)Se_(3)-based flexible transistor under the irradiation of ^(60)Co γ-ray with 100 krad(Si)is studied.Based on the fine characterization of element composition,surface morphology,phonon mode,and domain structure of α-In_(2)Se_(3) nanosheets,the radiation damage mechanism of γ-ray irradiation is analyzed.The effect of in-plane strain induced by bending on its photoelectric performance is studied.The mechanism of strain regulation is discussed by calculating the change of carrier concentration.The results show that the defects induced by γ-ray irradiation may be the main factor for the performance degradation of α-In_(2)Se_(3)-based flexible phototransistors,the introduction of-0.402%compressive strain can effectively regulate the photoelectric response performance of α-In_(2)Se_(3),so that after irradiation the photoelectric response of α-In_(2)Se_(3) flexible phototransistor is 8.26 times of that without strain when the optical power density is about 14.34 mW·cm^(-2),which indicates that the static strain regulation is an effective way to improve the photo response of photo detectors based on 2D ferroelectric materials.

关 键 词：α-In_(2)Se_(3) 晶体管 ^(60)Co Γ射线辐照 光电响应 应变调控 

分 类 号：O59[理学—应用物理]