以非晶碳作硅基红外增透膜的实验研究  

Experimental Study on Infrared Film of Antireflective Amorphous carbon on Silicon

作　　者：杨益民[1] 郭建[1] 杨国伟[1] 蔡孟秋[1] 

机构地区：[1]湘潭大学物理系,湘潭411105

出　　处：《光学学报》2002年第11期1296-1299,共4页Acta Optica Sinica

基　　金：湖南省教委基金 (98B0 0 4 )资助课题

摘　　要：在室温下 ,用激光烧蚀石墨靶方法在单晶硅衬底表面沉积了不同厚度的非晶碳膜。对膜进行了表面形貌观察 ,测试并分析了膜的拉曼散射光谱和傅里叶变换红外光谱。发现膜含微晶石墨杂质较少 ,观察到 12 0 0cm-1附近的非晶金刚石拉曼峰 ,膜层在红外的光透过率高 ,在硅衬底上适宜于制作波长短于 8μm的红外增透膜。Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature. Morphology was observed with scanning electron microscope (SEM). Raman scattering spectroscopy and Fourier transform infrared spectroscopy (FTIR) were analysised. It is found that these films had little of graphet micro crystaline in their matrix. A Raman peak for amorphic diamond was found around 1200 cm -1 . These films were transparent in infrared and suit for antireflective film deposited on silicon in the range of wavelength short than 8 μm.

关 键 词：硅基 实验研究 激光烧蚀 非晶碳膜 红外增透膜 拉曼散射光谱 傅里叶变换红外光谱 测试 

分 类 号：O484.5[理学—固体物理]