金属薄膜电迁移1/f噪声与1/f^2噪声统一模型  

A unified model for 1/f noise and 1/f^2 noise due to electromigration in metal film

作　　者：杜磊[1] 庄奕琪[1] 薛丽君[1] 

机构地区：[1]西安电子科技大学,西安710071

出　　处：《物理学报》2002年第12期2836-2841,共6页Acta Physica Sinica

摘　　要：应用晶粒边界自由体积的概念建立了能够统一描述金属薄膜 1 f噪声与 1 f2 噪声的模型 .该模型表明 ,结构完整的多晶金属薄膜产生的电噪声为 1 f噪声 ,当金属薄膜受到电迁移损伤而形成空洞时就会引入 1 f2 噪声的成分 .在电迁移应力实验中 ,观察到金属薄膜 1 fγ噪声在空洞成核前γ约为 1 0 ,一旦发生空洞成核 ,即突增至 1 6以上 。Based on the concept of free volume in grain boundary, a unified model for 1/f noise and 1/f(2) noise in metal film is proposed. It is shown from the model that the noise in the metal film with perfect polycrystalline structure appears to be 1/f type, while 1/f(2) component is introduced when the film is subjected to a certain eletromigration stress and the voids thus induced. It is observed in the electromigration stress test conducted by present authors that gamma is 1.0 or so for the measured 1/f(gamma) noise in the metal film in the initial stages of the test, but 7 abruptly increased to over 1.6 as soon as the voids are formed. This agrees with the prediction of the developed model.

关 键 词：统一模型 金属薄膜 1/^γ噪声 电迁移 自由体积 空调成核 超大集成电路 

分 类 号：TN405[电子电信—微电子学与固体电子学]