SiC光触发晶闸管的发展与挑战  

Development and Challenges of SiC Light Triggered Thyristor

作　　者：王曦 蒲红斌[1,2] 封先锋 胡继超[1,2] 刘青 杨勇 谌娟 WANG Xi;PU Hongbin;FENG Xianfeng;HU Jichao;LIU Qing;YANG Yong;CHEN Juan(Xi’an University of Technology,Xi'an,710048,CHN;Xi’an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion,Xi'an,710048,CHN)

机构地区：[1]西安理工大学电子工程系,西安710048 [2]西安市电力电子器件与高效电能变换重点实验室,西安710048

出　　处：《固体电子学研究与进展》2021年第3期171-175,181,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(62004161);陕西省自然科学基础研究计划资助项目(2020JQ-636);陕西省教育厅科学研究计划资助项目(20JK0796);西安市科协青年人才托举计划资助项目(095920201318);山西省招标项目(20201101017)。

摘　　要：SiC光触发晶闸管不仅具备传统SiC晶闸管超高耐压、超大通流能力的特点,还在简化驱动电路、提高系统抗电磁干扰能力方面具备独有优势。概述了SiC光触发晶闸管的发展历程,介绍了SiC LTT紫外发光二极管(UV LED)触发、SiC LTT放大门极以及全光控SiC LTT等重要技术,讨论了SiC LTT仍面临的低触发光强与快开通速度难以兼顾的技术挑战,分析了放大门极结构在低光强触发模式下改善SiC LTT性能的局限性。最后,探讨了低光强触发模式下SiC LTT难以快速开通这一瓶颈问题的物理机制与改善方向。Not only obtaining features of ultra-high blocking voltage and ultra-large current capability like conventional SiC thyristor,SiC light triggered thyristor(LTT)but also has unique advantages in simplifying driver circuitry and improving anti-electromagnetic interference ability. In this article,developments of SiC LTT are summarized. Important technologies such as UV LED triggered SiC LTT,SiC LTT with amplifying-gate and all-optical controlled SiC LTT are introduced. Technical challenges of low triggering light intensity and fast switching speed of SiC LTT are discussed. Limitations of amplifying-gate structure in improving performances of SiC LTT under low light intensity triggering mode are analyzed. Finally,physical mechanism and improvement direction of the bottleneck problem that SiC LTT is difficult to be quickly triggered on under low light intensity are explored and discussed.

关 键 词：光触发晶闸管 碳化硅 发展 挑战 

分 类 号：TN34[电子电信—物理电子学]