芯片制程中金属互连工艺及其相关理论研究进展  

Research Progress of Metal Interconnection Technology and Related Theory in Chip Fabrication

作　　者：李亚强 马晓川 张锦秋 杨培霞 安茂忠 LI Ya-qiang;MA Xiao-chuan;ZHANG Jin-qiu;YANG Pei-xia;AN Mao-zhong(MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage,School of Chemistry and Chemical Engineering,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]哈尔滨工业大学化工与化学学院新能源转换与储存关键材料技术工业和信息化部重点实验室,哈尔滨150001

出　　处：《表面技术》2021年第7期24-43,164,共21页Surface Technology

基　　金：国家自然科学基金(2197020448)。

摘　　要：随着芯片制程中互连线尺寸的不断减小,集成电路技术已经从以晶体管为中心的时代发展到以互连为中心的时代。传统的互连金属——铝、铜,在互连线性能和可靠性方面渐渐无法满足人们的需求。钴在微纳尺度下因具有更好的电性能,有可能取代铜而成为新的互连线金属,现已受到广泛关注。首先对芯片金属互连技术的历史和发展进行了综述,分别介绍了铝互连、铜互连的优点、存在的缺陷与改进方法,并对新一代钴互连技术进行了介绍,同时对潜在的互连材料,如钌、金、纳米碳材料等进行了总结。之后论述了超填充铜和超填充钴的相关机理,如铜的扩散-吸附整平机理、曲率增强加速剂覆盖机制(CEAC)以及钴的氢诱导失活机制、电压性依赖抑制机制、S型负微分电阻机制(S-NDR)、差动电流效率填充机制等。最后对铜超填充和钴超填充过程中的形核和生长过程的研究现状进行了分析,对不同镀液体系、基底材料、电镀工艺等对铜和钴的形核和生长的影响进行了归纳总结,以期对未来钴互连的研究提供帮助。With the continuous development of interconnect size in chip fabrication,integrated circuit technology has evolved from transistor-centered era to interconnect-centered era.Conventional metallic interconnects,such as aluminum and copper,face serious challenges in terms of interconnect performance and reliability.Cobalt is considered as an alternative metal to replace copper interconnects because of its better electrical properties at the micro-nano scale,and has received extensive attention and research.The first part of this paper summarizes the history and development of chip metal interconnection technology.The advantages and disadvantages of aluminum interconnection and copper interconnection are introduced.The new generation of cobalt interconnection technology is summarized.This first part also summarizes the potential interconnection materials,such as ruthenium,gold and nano-carbon.In the second part,the related superfilling mechanisms of copper and cobalt are discussed,such as diffusion-adsorption leveling mechanism and curvature enhanced accelerator coverage(CEAC)model,hydrogen induced deactivation(HID)model,potential dependent suppression effect,S-shaped negative differential resistance(S-NDR),differential current efficiency fill(DCEF)mechanism and so on.In the third part,the nucleation and growth process during copper and cobalt superfilling is reviewed,and the influences of different plating solutions,substrate materials and plating processes on the nucleation and growth of copper and cobalt are summarized,so as to provide an insight into the future research on cobalt interconnection.

关 键 词：金属互连 铜互连 钴互连 超填充机理 形核与生长 

分 类 号：TQ153[化学工程—电化学工业]