先进制程用光刻胶及TMAH显影液的改进  

Improvement of Photoresist and TMAH Developer for Advanced Process

作　　者：张之钧 尹云舰 李潇逸 倪芸岚 邢攸美 ZHANG Zhi-jun;YIN Yun-jian;LI Xiao-yi;NI Yun-lan;XING You-mei(Hangzhou Greenda Electronic Materials Co.,Ltd.,Hangzhou,Zhejiang 311228,China)

机构地区：[1]杭州格林达电子材料股份有限公司,浙江杭州311228

出　　处：《浙江化工》2021年第7期13-17,共5页Zhejiang Chemical Industry

基　　金：浙江省科技计划项目(2019C01087)。

摘　　要：光刻是一种利用曝光、显影和刻蚀等工艺将光掩模上的图形转移到衬底材料上的工艺,是半导体器件制造工艺中的重要步骤。其中,在光刻胶层刻画图形时,主要涉及材料为光刻胶、显影液。在G线(436 nm)、I线(365 nm)光刻工艺中,光刻胶主要是酚醛树脂-重氮萘醌体系,显影液一般采用2.38 wt%的四甲基氢氧化铵(TMAH)水溶液;在193 nm、极紫外(EUV)光刻工艺中,光刻胶主要为含有酯基的聚合物-光致产酸剂(PAG)体系,此外由于接触的界面张力以及膨润问题,显影液中需要加入非离子表面活性剂。本文主要介绍几种先进光刻工艺中的光刻胶和显影液。Photolithography is a process of transferring patterns from photomask to substrate material by exposure,development and etching.It is an important step in the manufacturing process of semiconductor device.In the process of drawing patterns in photoresist layer,the main materials involved are photoresist and developer.In the G-line(436 nm)and I-line(365 nm)photolithography process,the main photoresist is phenolic resin-diazo naphthoquinone system,and the developer generally uses 2.38 wt%tetramethylammonium hydroxide(TMAH)aqueous solution.In 193 nm and extreme ultraviolet(EUV)photolithography process,the photoresist is mainly a ester containing polymer-PAG system.In addition,due to the interfacial tension and swelling problems,nonionic surfactants need to be added into the developer.Several kinds of photoresist and developer in advanced photolithography process are mainly introduced in this paper.

关 键 词：光刻工艺 光刻胶 显影液 

分 类 号：TN305.7[电子电信—物理电子学]