SiC MOS器件界面钝化研究进展  

Research Advancement on Interface Passivation of SiC MOSFETs

作　　者：朱浩 张静[1] 李鹏飞[1] 袁述 ZHU Hao;ZHANG Jing;LI Pengfei;YUAN Shu(School of Information Science and Technology,North China University of Technology,Beijing 100144,P.R.China;Integr.Circ.Advanced Process Center(ICAC),Institute of Microelec.,Chinese Academy of Sci.,Beijing 100029,P.R.China)

机构地区：[1]北方工业大学信息学院,北京100144 [2]中国科学院微电子研究所先导工艺研发中心,北京100029

出　　处：《微电子学》2021年第3期382-389,共8页Microelectronics

基　　金：中国科学院微电子研究所所长基金(Y9SR03X002);北京市自然科学基金面上项目(4182021)。

摘　　要：从氧化后退火处理、氮化处理、碳帽、钡夹层、淀积氧化物后退火处理五个方面介绍了碳化硅钝化工艺。通过改进钝化工艺可以有效降低界面态密度。针对这几种钝化工艺对SiC/SiO_(2)界面态密度的影响进行讨论,分析几种钝化工艺的优劣,并重点介绍了氧化后退火处理和氮化处理两种钝化方法。研究发现,NO氮化工艺能有效降低界面态密度,提高界面可靠性。该工艺适用于SiC MOS器件的制造。The passivation technology of silicon carbide was introduced from five aspects:post-oxidation annealing treatment,nitriding treatment,carbon cap,barium sandwich and post-deposition annealing of oxide.The density of interfacial states could be effectively reduced by improving the passivation process.The influence of these passivation processes on the interface state density of SiC/SiO_(2) was discussed,and the advantages and disadvantages of these passivation processes were analyzed.The passivation methods of annealing and nitriding after oxidation were mainly introduced.Finally,it was found that NO nitrogen technology could effectively reduce the interface density and improve the interface reliability,and it was suitable for manufacturing SiC MOS devices.

关 键 词：碳化硅 钝化 界面态密度 

分 类 号：TN386[电子电信—物理电子学]