先进MOSFET中1/f噪声研究进展  

Research Progress of 1/f Noise Charateristics in Advanced MOSFETs

作　　者：马婷[1] 任芳[1] 夏世琴 廖希异 张培健[2] MA Ting;REN Fang;XIA Shiqin;LIAO Xiyi;ZHANG Peijian(The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,P.R.China;Science and Technology on Analog Integrated Circuit Laboratory,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]模拟集成电路国家重点实验室,重庆400060

出　　处：《微电子学》2021年第3期390-398,共9页Microelectronics

基　　金：国防科技工业抗辐照应用技术创新中心创新基金资助项目(KFZC2020020702)。

摘　　要：全面综述了先进金属氧化物半导体场效应晶体管(MOSFET)的1/f噪声研究进展。界面态、器件结构、材料缺陷、量子效应等诸多因素均会影响1/f噪声。随着工艺尺寸的持续缩小和高k介质材料的应用,以及热载流子效应、辐照损伤等因素的影响,MOSFET的1/f噪声起源问题一直是学术界具有较大分歧和争议的课题。只有澄清了1/f噪声的真正物理起源,才能有效通过工艺加以改善,支撑设计应用。A comprehensive review of the 1/fnoise research progress in advanced Metal-Oxide-Semiconductor Field-Effect Transistors(MOSFET)was presented.Interfacial states,device structure,material defects,quantum effects and many other factors could affect 1/f noise.With the continuous reduction of process size and the application of high kdielectric,as well as the influence of hot carrier effect,radiation damage and other factors,the origin of 1/fnoise in MOSFET had been a huge disagreement and controversy in the academic circle.Only when the real physical origin of 1/fnoise was clarified,could it be effectively improved through the process to support the design application.

关 键 词：1/f噪声 MOSFET 高k介质 热载流子 辐照损伤 

分 类 号：TN386[电子电信—物理电子学]