增强型氮化镓功率器件的总剂量效应  

Total Ionizing Dose Effect of Enhancement-Mode GaN Power Devices

作　　者：陈思远 于新[1,2] 陆妩[1,2] 王信[1,2] 李小龙[1,2] 刘默寒 孙静[1,2] 郭旗[1,2] CHEN Siyuan;YU Xin;LU Wu;WANG Xin;LI Xiaolong;LIU Mohan;SUN Jing;GUO Qi(Key Lab.of Functional Materials and Devices for Special Environments,Xinjiang Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi 830011,P.R.China;Xinjiang Key Lab.of Elec.Information Material and Device,Urumqi 830011,P.R.China;University of Chinese Academy of Sciences,Beijing 100049,P.R.China)

机构地区：[1]中国科学院新疆理化技术研究所特殊环境功能材料与器件重点实验室,乌鲁木齐830011 [2]中国科学院新疆理化技术研究所新疆电子信息材料与器件重点实验室,乌鲁木齐830011 [3]中国科学院大学,北京100049

出　　处：《微电子学》2021年第3期444-448,共5页Microelectronics

基　　金：中科院西部之光项目(2019-XBQNXZ-B-014);国家自然科学基金资助项目(U1532261,U1630141,61534008)。

摘　　要：研究了P型帽层和共源共栅(Cascode)结构氮化镓(GaN)功率器件高/低剂量率辐照损伤效应。试验结果表明,P型帽层和Cascode结构GaN功率器件都不具有低剂量率损伤增强效应(ELDRS);Cascode结构GaN功率器件总剂量辐照损伤退化更明显;P型帽层结构的GaN功率器件抗总剂量能力较强。分析了二者的退化机制。试验结果为GaN功率器件空间应用提供了有益参考。High and low dose-rate radiation damage effects of P-type cap and cascode structure gallium nitride power devices were investigated.Experimental results showed that neither P-type cap nor cascode structure gallium nitride power device had Enhanced Low Dose Rate Sensitivity effect(ELDRS).The electrical parameters of cascode structure gallium nitride power devices degraded more obviously after total ionizing dose irradiation.The P-type cap structure of GaN power devices had strong resistance to total ionizing dose.The mechanism of the degradation in electrical parameters after irradiation was analyzed.The experimental results of this study provided a useful reference for comprehensively evaluating GaN power devices utilized for space applications.

关 键 词：氮化镓功率器件 总剂量效应 低剂量率损伤增强效应 

分 类 号：TN386[电子电信—物理电子学]