金锡合金自动共晶焊接工艺参数优化研究  

Optimization Research of Automatic Eutectic Die Attach Parameters for Au_(80)Sn_(20)Alloy

作　　者：李茂松[1] 黄大志[1] 朱虹姣[1] 胡琼[1] LI Maosong;HUANG Dazhi;ZHU Hongjiao;HU Qiong(The 24th Research Institute of China Electronics Technology Group Corp.,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2021年第3期449-454,共6页Microelectronics

基　　金：模拟集成电路国家重点试验室基金资助项目(614280204030317)。

摘　　要：为了更好地控制共晶焊接空洞率和剪切力,提出了一种采用正交试验法优化自动共晶焊接参数的方法。对焊接温度、焊接时间、焊接压力三个关键参数采用正交法进行三因子两水平极差分析,得到了影响芯片金锡共晶焊接质量的主次因子及共晶焊接参数的最优组合。试验结果证明,使用优化的工艺参数,芯片焊接质量得到明显提升,共晶焊接区空洞率均值及芯片剪切力Cpk值均完全满足GJB548B的要求。An orthogonal experimental method was used to optimize the parameters of automatic eutectic die attach for controlling the void rate and shear strength.The three key parameters of attach temperature,attach time and attach pressure were analyzed by three factors and two levels of orthogonal method.The primary and secondary factors which were affecting eutectic attach quality was obtained,and the best optimal combination of attach parameters was also obtained.The experimental results showed that the die eutectic attach quality was improved obviously by using the optimized parameters combination.The average void rate of die eutectic soldering zone and the Cpk value of chip shear force were fully meeting the requirements of GJB548B.

关 键 词：芯片共晶焊接 正交试验 共晶空洞 剪切力 金锡焊料 工艺优化 

分 类 号：TN305[电子电信—物理电子学]