不同温度下GaN基HEMT器件氢效应试验研究  

Experimental Study of Hydrogen Effect on GaN-Based HEMT at Different Temperature

作　　者：裴选[1] 席善斌[1] 汪鑫 王金延[2] 王晨[2] Pei Xuan;Xi Shan-bin;Wang Xin;Wang Jin-yan;Wang Chen(The 13^(th)Research Institute,CETC,Hebei Shijiazhuang 050051;Beijing University,Beijing 100871)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051 [2]北京大学,北京100871

出　　处：《电子质量》2021年第7期107-111,共5页Electronics Quality

摘　　要：该文开展不同温度下GaN基HEMT器件氢气效应的试验研究。通过对比不同氢浓度和不同温度条件下器件变化情况,试验发现常温下不同浓度氢气处理对器件电学特性无显著影响。氢气环境对GaN基HEMT器件栅电流影响似乎存在一个75℃~160℃温度区间内阈值温度,在该温度以下栅电流减小,即绝对值增大,在该温度以上则反之,栅反向电流绝对值减小。160℃下高温对比试验发现,氢效应能够削弱该效应,即抑制栅反向电流绝对值的减小。Experimental study of hydrogen effect on GaN-based HEMT was carried out at different temperature.Devices were subjected to different temperature and H2 concentration,after which electrical characteristics were analyzed.No apparent effect of H2 concentration on devices was observed at room temperature.Apparent change of gate leakage current was observed after H2 processing at elevated temperature.There seemed to be a threshold temperature during H2 processing,below which the resultant absolute value of the inverse gate current increased,and things were opposite with temperature higher than it.Temperature processing without H2 was carried out at 160℃,from which we observed that H2 could inhibit the decrease of inverse gate current.

关 键 词：GAN基HEMT 氢效应 温度 

分 类 号：TN386[电子电信—物理电子学]