基于电学法对二维多芯片组件的热阻矩阵研究  

Thermal Resistance Matrix Research of Two-Dimension Multi-Heat Sources MCM Based on Electrical Method

作　　者：汪张超[1] 刘安[1] 吕红杰 Wang Zhang-chao;Liu An;Lv Hong-jie(The 43th Research Institute of CETC,Anhui Hefei 230088)

机构地区：[1]中国电子科技集团公司第四十三研究所,安徽合肥230088

出　　处：《电子质量》2021年第7期112-116,共5页Electronics Quality

摘　　要：高密度组装导致MCM芯片间热耦合效应增加,结温增加来自芯片自发热和热耦合效应。该文以调宽功放的多个功率管为研究对象,关注多芯片的热耦合效应,基于电学方法确定热阻矩阵,通过理论计算获得芯片稳态工作温度。并通过红外热像试验验证模型计算的结果。基于热阻矩阵模型分析不同条件下的芯片温升。High density assembly results in evident thermal coupling effect among chips in MCM.Junction tem perature is decided by self-heating effect and thermal coupling effect.Based on Electrical Method,the thermal resistance matrix was established,the model of calculating junction temperature was obtained by thermal resistance matrix.The model was verified by infrared thermal imaging equipment.Junction temperature under different working conditions was obtained by thermal resistance matrix.

关 键 词：多芯片组件 热阻矩阵 半导体技术 VDMOS 

分 类 号：TN406[电子电信—微电子学与固体电子学]