Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition  

作　　者：CHEN Peng SHEN Bo ZHU Jian-Min CHEN Zhi-Zhong ZHOU Yu-Gang XIE Shi-Yong ZHANG Rong HAN Ping GU Shu-Lin ZHENG You-Dou JIANG Shu-Sheng FENG Duan Z.C.Huang 陈鹏;沈波;朱建民;陈志忠;周玉刚;谢世勇;张荣;韩平;顾书林;郑有炓;蒋树声;冯端;黄振春(Department of Physics and Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210093;Raytheon ITSS,4500 Forbes Bulivard,MD20771,USA)

机构地区：[1]Department of Physics and Laboratory of Solid State Microstructures,Nanjing University,Nanjing 210093 [2]Raytheon ITSS,4500 Forbes Bulivard,MD20771,USA

出　　处：《Chinese Physics Letters》2000年第3期224-226,共3页中国物理快报（英文版）

基　　金：Supported by Project of High Technology Research&Development of China(863-715-011-0030),Project of Fundamental Research of China,the National Natural Science Foundation of China under Grant Nos.69636010 and 69636040,and MOTOROLA(China Inc.)Semiconductor Scholarship.

摘　　要：Microstructures of GaN buffer layers grown on Si(111)substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope(AFM)and a high-resolution transmission electron microscope(HBTEM).AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature.Cross-sectional HBTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles.The boundaries of those domains locate near the bunched steps,and the regions of the Him on a terrace between steps have the same crystal orientation.An amorphous-like layer,about 3nm thick,can also be observed between the GaN buffer layer and the Si substrate.

关 键 词：SI(111) TEMPERATURE GAN 

分 类 号：TN3[电子电信—物理电子学]