Unintentional Doping Mechanisms in GaAs/Si Films Grown by Metalorganic Chemical Vapor Deposition  

作　　者：WANG Jun DENG Can JIA Zhi-Gang WANG Yi-Fan WANG Qi HUANG Yong-Qing REN Xiao-Min 王俊;邓灿;贾志刚;王一帆;王琦;黄永清;任晓敏(State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876)

机构地区：[1]State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876

出　　处：《Chinese Physics Letters》2013年第11期140-143,共4页中国物理快报（英文版）

基　　金：Supported by the Fundamental Research Funds for the Central University under Grant No 2013RC1205;the National Basic Research Program of China under Grant No 2010CB327602。

摘　　要：To explain different doping effects in a buffer layer,thermally annealed interface,and upper epilayers of GaAs/Si films grown by Metalorganic Chemical Vapor Deposition(MOCVD),the behaviors of unintentional doping in GaAs/Si films are investigated in detail.A third doping mechanism of arsine impurity incorporation during the growth process of GaAs/Si films,apart from conventional mechanisms of gas phase reaction and diffusion from the silicon substrate,is proposed.The experimental results reveal that the doping behavior in the buffer layer studied is determined by the three types of doping mechanisms together.However in the thermally annealed interface and upper epilayers,the third doping mechanism is dominant.According to the third mechanism,the background carrier concentration in GaAs/Si films grown by MOCVD could be properly controlled through the arsine flow rate.

关 键 词：GAAS/SI MOCVD DOPING 

分 类 号：TN3[电子电信—物理电子学]