Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate  

作　　者：WU Meng ZENG Yi-Ping WANG Jun-Xi HU Qiang 吴猛;曾一平;王军喜;胡强(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;Material Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083;Semiconductor Lighting Technology Research and Development Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 [2]Material Science Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083 [3]Semiconductor Lighting Technology Research and Development Center,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083

出　　处：《Chinese Physics Letters》2011年第6期333-336,共4页中国物理快报（英文版）

摘　　要：A low-temperature GaN(LT-GaN)nucleation layer is grown on a patterned sapphire substrate(PSS)using metal-organic chemical vapor deposition(MOCVD).The surface morphology of the LT-GaN is investigated and the selective nucleation phenomenon in the growth process of the LT-GaN nucleation layer is discovered.Meanwhile,effects of thickness of the LT-GaN and the annealing process on the phenomenon are also discussed.A pattern model is also proposed to analyze the possible mechanisms in atomic scale.

关 键 词：GAN SAPPHIRE MOCVD 

分 类 号：TN3[电子电信—物理电子学]