Preparation and Properties of Diluted Magnetic Semiconductors GaMnAs by Low-Temperature Molecular Epitaxy  

作　　者：JI Chang-Jian ZHANG Cheng-Qiang ZHAO Gang WANG Wen-Jing SUN Gang YUAN Hui-Min HAN Qi-Feng 姬长建;张成强;赵刚;王文静;孙刚;袁慧敏;韩奇峰(Department of Physics,Qilu Normal University,Jinan 250013;Department of Physics,Ludong University,Yantai 264025;Department of Physics,Shanghai Normal University,Shanghai 200234)

机构地区：[1]Department of Physics,Qilu Normal University,Jinan 250013 [2]Department of Physics,Ludong University,Yantai 264025 [3]Department of Physics,Shanghai Normal University,Shanghai 200234

出　　处：《Chinese Physics Letters》2011年第9期213-216,共4页中国物理快报（英文版）

基　　金：by the National Natural Science Foundation of China under Grant No 61006010;Shandong-Provincial Higher Educational Science and Technology Program under Grant No J11LA58.

摘　　要：GaMnAs films are prepared by low-temperature molecular beam epitaxy.Based on the experimental results,the influence of growth and annealing conditions on the physical properties and defect configurations is discussed.In particular,the major compensating defects,such as As antisite(A_(sGa))and Mn interstitials(Mn_(I)),are studied in detail.Thereby,the relationship between structure and magnetic properties is given.It is indicated that a higher annealing temperature can remove MnI out of the GaMnAs lattices so as to raise the Curie temperature TC.Meticulous optimization of growth techniques(T_(S)=230℃,A_(s2):Ga=5:1 and Ta=250℃)leads to reproducible physical properties and ferromagnetic transition temperatures well above 148 K.

关 键 词：GAMNAS ANNEALING REMOVE 

分 类 号：O47[理学—半导体物理]