Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm  

作　　者：FRANK MEHNKE CHRISTIAN KUHN MARTIN GUTTMANN LUCA SULMONI VERENA MONTAG JOHANNES GLAAB TIM WERNICKE MICHAEL KNEISSL 

机构地区：[1]Institute of Solid State Physics,Technische Universität Berlin,10623 Berlin,Germany [2]Ferdinand-Braun-Institut,Leibniz-Institut für Höchstfrequenztechnik,12489 Berlin,Germany [3]Current address:School of Electrical and Computer Engineering,Georgia Institute of Technology,Atlanta,Georgia 30332,USA

出　　处：《Photonics Research》2021年第6期1117-1123,共7页光子学研究（英文版）

基　　金：Bundesministerium für Bildung und Forschung(03ZZ0134C);Deutsche Forschungsgemeinschaft(CRC7879315).

摘　　要：We present the growth and electro-optical characteristics of highly transparent AlGaN-based tunnel heterojunction light-emitting diodes(LEDs)emitting at 232 nm entirely grown by metalorganic vapor phase epitaxy(MOVPE).A GaN:Si interlayer was embedded into a highly Mg-and Si-doped Al_(0.87)Ga_(0.13)N tunnel junction to enable polarization field enhanced tunneling.The LEDs exhibit an on-wafer integrated emission power of 77μWat 5 mA,which correlates to an external quantum efficiency(EQE)of 0.29%with 45μWemitted through the bottom sapphire substrate and 32μW emitted through the transparent top surface.After depositing a highly reflective aluminum reflector,a maximum emission power of 1.73 mW was achieved at 100 mA under pulsed mode operation with a maximum EQE of 0.35%as collected through the bottom substrate.

关 键 词：HETEROJUNCTION MOVPE ALGAN 

分 类 号：TN312.8[电子电信—物理电子学]