AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al_(2)O_(3) Laminated Dielectric by Atomic Laver Deposition  

作　　者：BI Zhi-Wei HAO Yue FENG Qian GAO Zhi-Yuan ZHANG Jin-Cheng MAO Wei ZHANG Kai MA Xiao-Hua LIU Hong-Xia YANG Lin-An MEI Nan CHANG Yong-Ming 毕志伟;郝跃;冯倩;高志远;张进成;毛维;张凯;马晓华;刘红侠;杨林安;梅楠;常永明(Key Lab of Fundamental Science for National on Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071;Lab of Photoelectronic Technology,School of Electronic and Control Engineering,Beijing University of Technology,Beijing 100124)

机构地区：[1]Key Lab of Fundamental Science for National on Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi’an 710071 [2]Lab of Photoelectronic Technology,School of Electronic and Control Engineering,Beijing University of Technology,Beijing 100124

出　　处：《Chinese Physics Letters》2012年第2期221-224,共4页中国物理快报（英文版）

基　　金：Supported by the State Key Program and Major Program of the National Natural Science Foundation of China under Grant Nos 60736033 and 60890191;the Doctoral Scientific Research Fund of Beijing University of Technology(No X0002013201101)。

摘　　要：We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al_(2)O_(3) lamination dielectric deposited by atomic layer deposition (ALD) as the gate insulator.A large gate voltage swing (GVS) of 3.96 V and a high breakdown voltage of-150 V for the MIS-HEMT were obtained.We present the gate leakage current mechanisms and analyze the reason for the reduction of the leakage current.Compared with traditional HEMTs,the maximum drain current is improved to 960mA/mm,indicating that NbAlO layers could reduce the surface-related depletion of the channel layer and increase the sheet carrier concentration.In addition,the maximum oscillation frequency of 38.8 GHz shows that the NbAlO high-k dielectric can be considered as a potential gate oxide comparable with other dielectric insulators.

关 键 词：ALGAN/GAN HEMTS DRAIN 

分 类 号：TN3[电子电信—物理电子学]