Low Power and High Sensitivity MOSFET-Based Pressure Sensor  

作　　者：ZHANG Zhao-Hua REN Tian-Ling ZHANG Yan-Hong HAN Rui-Rui LIU Li-Tian 张兆华;任天令;张艳红;韩锐锐;刘理天(Tsinghua National Laboratory for Information Science and Technology,Institute of Microelectronics,Tsinghua University,Beijing 100084)

机构地区：[1]Tsinghua National Laboratory for Information Science and Technology,Institute of Microelectronics,Tsinghua University,Beijing 100084

出　　处：《Chinese Physics Letters》2012年第8期276-278,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation(61025021,60936002);the National Key Project of Science and Technology of China(2009ZX02023-001,2011ZX02403-002).

摘　　要：Based on the metal-oxide-semiconductor field effect transistor(MOSFET)stress sensitive phenomenon,a low power MOSFET pressure sensor is proposed.Compared with the traditional piezoresistive pressure sensor,the present pressure sensor displays high performances on sensitivity and power consumption.The sensitivity of the MOSFET sensor is raised by 87%,meanwhile the power consumption is decreased by 20%.

关 键 词：POWER MOSFET TRANSISTOR 

分 类 号：TN3[电子电信—物理电子学]