一种总剂量辐照加固的双栅LDMOS器件  

Dual-Gate LDMOS Device of Total-Ionizing-Dose Irradiation Hardening

作　　者：马红跃 方健[1] 雷一博 黎明 卜宁 张波[1] MA Hongyue;FANG Jian;LEI Yibo;LI Ming;BU Ning;ZHANG Bo(State Key Laboratory of Electronic Thin Films and Integrated Device,University of Electronic Science and Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子与封装》2021年第8期71-76,共6页Electronics & Packaging

摘　　要：提出一种600 V N型双栅LDMOS新器件结构,能够减小总剂量(TID)辐照导致的阈值电压漂移。与常规600 V NLDMOS相比,所提出的双栅由厚栅和薄栅构成,其中薄栅位于p阱的N+有源区上方,厚栅为原器件结构的栅,在受到TID辐照时,薄栅结构可以抑制阈值电压漂移,厚栅结构能保证器件耐压,提高了器件可靠性。利用Sentaurus TCAD进行仿真验证,仿真结果表明,双栅器件在保持原有器件转移、输出、开关等电学特性的基础上,在1 Mrad(Si)剂量辐射时,常规结构器件阈值电压漂移量为105.8%,而双栅新结构器件的阈值电压漂移量仅为10.2%。A new 600 V N-type double-gate LDMOS device structure is proposed,which can reduce the threshold voltage drift induced by total-ionizing-dose(TID)irradiation.Compared with conventional 600 V NLDMOS,the proposed double gate is composed of thick gate and thin gate.The thin gate is located above the N+active region of P well,and the thick gate is the gate of the original device structure.When irradiated by TID,the thin gate structure can reduce the threshold voltage drift,and the thick gate structure can ensure the voltage withstand of the device and improve the reliability of the device.The Sentaurus TCAD simulation results show that the threshold voltage shift of the dual-gate device is 105.8%,while the threshold voltage shift of the dual-gate device is only 10.2%at 1 Mrad(Si)radiation dose,while the transfer,output,and switching characteristics of the original device are maintained.

关 键 词：600 V NLDMOS 双栅 总剂量 阈值电压漂移 

分 类 号：TN303[电子电信—物理电子学]