Topography of InP Surface Bombarded by O_(2)^(+) Ion Beam  

作　　者：SUN Zhao-qi 孙兆奇(Department of Physics,Anhui University,Hefei 230039)

机构地区：[1]Department of Physics,Anhui University,Hefei 230039

出　　处：《Chinese Physics Letters》1997年第10期760-763,共4页中国物理快报（英文版）

基　　金：Supported by the Technical Cooperation Foundation of British Council.

摘　　要：The topography of InP surface bombarded by O_(2)^(+) ion beam was investigated.Rippled topographies were observed for bombarded samples,and the data show that the ripple formation starts from a sputtering depth of about 0.4μm.The wavelength and the disorder of the ripples both increase as the sputtering depth increases.The wavelength of the ripples appears to be sputtering depth dependent rather than sputtering rate dependent.It is confirmed that the ion-beam-induced surface rippling can be effectively suppressed by sample rotation during bombardment.

关 键 词：INP BEAM SPUTTERING 

分 类 号：TN3[电子电信—物理电子学]