InGaAs/GaAs多量子阱近红外光探测结构设计与表征  

Design and characterization the InGaAs/GaAs multiple quantum wells near-infrared light detecting structure

作　　者：李林森 汪涛 朱喆 Li Linsen;Wang Tao;Zhu Zhe(Anhui Province Key Laboratory of Microsystem,East China Research Institute of Microelectronics,Hefei 230088,China)

机构地区：[1]华东微电子研究所微系统安徽省重点实验室,安徽合肥230088

出　　处：《电子技术应用》2021年第7期118-124,共7页Application of Electronic Technique

基　　金：XX基础研发计划-JCKY2019210B006。

摘　　要：介绍了用于近红外光探测的InGaAs三元化合物材料体系,并通过数学软件编写求解出InGaAs/GaAs单量子阱有限深势阱的波函数方程。根据计算结果,设计出InGaAs/GaAs多量子阱结构,之后采用分子束外延技术完成了高质量外延片结构的研制,通过双晶X射线衍射等分析手段,推算出多量子阱结构中In的组分,势垒与势阱的厚度等参数与理论设计一致,具有很好的近红外探测器研制价值。This paper summaries InGaAs ternary compound material which can be used to detect near-infrared light,and solves the wave function equation of the InGaAs/GaAs single quantum well by using mathematics software.The InGaAs/GaAs multiple quantum wells structure is designed and fabricated by MBE on the basis of the calculated conclude.The In component and the thickness of the well and barrier can be calculated by double crystal X-ray diffraction analysis.The results are consistent with theoretical design and could guide the infrared detector development.

关 键 词：INGAAS/GAAS 多量子阱 红外 

分 类 号：TN21[电子电信—物理电子学]