检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:刘代军[1,2] 郭云芝 穆学桢[1] 闫海涛[3] 谢占武 张义飞 LIU Daijun;GUO Yunzhi;MU Xuezhen;YAN Haitao;XIE Zhanwu;ZHANG Yifei(China Airborne Missile Academy,Luoyang 471009,China;Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471009,China;Puyang photoelectric technology industry research institute,Puyang 457100,China)
机构地区:[1]中国空空导弹研究院,河南洛阳471009 [2]红外探测器技术航空科技重点实验室,河南洛阳471009 [3]濮阳光电产业技术研究院,河南濮阳457100
出 处:《兵器装备工程学报》2021年第8期175-179,共5页Journal of Ordnance Equipment Engineering
基 金:航空科学基金项目(20182412009);河南重大科技专项项目(171100210700)。
摘 要:从垂直腔激光器阵列到光纤阵列的高效耦合一直是高速有源光缆制备过程中的挑战。基于界面光波传输的相位匹配,根据界面的折射率的分布及波动传输方程,设计了41°转向角度的微反射镜。基于各向异性晶体蚀刻仿真,得到具有特定晶体取向的硅基微结构。在研究制备工艺的方法中,通过在含异丙醇有机添加剂的氢氧化钾溶液中硅各向异性湿法蚀刻制备了具有41°微反射镜的V型槽阵列,异丙醇表面活性剂在氢氧化钾溶液蚀刻硅过程中起关键作用。然后对获得的芯片进行表面粗糙度、轮廓和反射率的表征及测试,探索了膜层(TFCalc)的SiO_(2)/Si高反射率介电膜的作用及效果,测试结果表明:所研制的芯片的反射率近100%,最高耦合效率在762 nm处,达92%。High-efficiency coupling from vertical-cavity surface-emitting laser arrays(VCSELs)to fiber arrays has always been a challenge in the manufacture process of high speed active optical cables.Based on the phase matching of interface light wave transmission,according to the refractive index distribution and wave propagation equation of interface,a 41°Micro mirror with steering angle was made.Based on the anisotropic crystal etching simulation(ACES),the silicon-based microstructure with specific crystal orientation was obtained.In the process of preparation industry,the silicon anisotropic wet etching method was used to prepare the silicon with 41°Isopropanol surfactant which plays a key role in etching silicon in KOH solution.Then,the surface roughness,profile and reflectivity of the chip were characterized and tested,and the function and effect of the SiO_(2)/Si high reflectivity dielectric film(TFCalc)were explored.The results show that the reflectivity of the chip is nearly 100%,and the highest coupling efficiency is at 762 nm,which can reach 92%.
关 键 词:转向芯片 各向异性晶体蚀刻仿真 湿法刻蚀 V型槽 高反膜 耦合效率
分 类 号:TJ462[兵器科学与技术—火炮、自动武器与弹药工程]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:18.218.8.36