沉积温度对化学气相沉积法制备铜薄膜性质的影响  

Effect of Deposition Temperature on the Properties of Cu Thin Film Prepared by Chemical Vapor Deposition

作　　者：刘莎[1] 徐源来[1] 赵培[1,2] 李紫琪 陈志杰 LIU Sha;XU Yuanlai;ZHAO Pei;LI Ziqi;CHEN Zhijie(Key Laboratory for Green Chemical Process of Ministry of Education,School of Chemical Engineering&Pharmacy,Wuhan Institute of Technology,Wuhan 430205,China;School of Materials Science and,Engineering,Wuhan Institute of Technology,Wuhan 430205,China)

机构地区：[1]绿色化工过程教育部重点实验室化工与制药学院武汉工程大学,武汉430205 [2]武汉工程大学材料科学与工程学院,武汉430205

出　　处：《真空科学与技术学报》2021年第7期640-647,共8页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金面上基金资助项目(51972241)。

摘　　要：以双(2,2,6,6-四甲基-3,5-庚二酮)化铜(Cu(DPM)2)为前驱体,使用智能化学气相沉积设备在673 K至1173 K下于AlN多晶基板上制备Cu薄膜。研究了不同沉积温度对Cu薄膜的相组成、择优取向、宏观表面、微观结构、元素组成及电导的影响。在873 K至1173 K时制备了具有(111)择优取向的紫铜色铜薄膜,同时存在(200)和(220)取向,且铜晶粒呈岛状生长模式。随着沉积温度的升高,薄膜的导电性先增强后减弱。在1073 K时,制得了导电性最好且高度(111)择优取向的最纯紫铜色Cu薄膜,即1073 K为制备Cu薄膜的最佳沉积温度。Copper thin films were prepared on aluminum nitride(AlN)polycrystalline substrate by chemical vapor deposition(CVD)using Cu(DPM)2 as a precursor at deposition temperatures(Tdep)range from 673 K to1173 K. Effects of Tdepon the phase composition,preferred orientation,macroscopic surface,microstructure,elemental composition,and conductance of the Cu thin film were investigated. The aeneous Cu films with(111)preferred orientation were prepared at 873 K to 1173 K;meanwhile,(200)and(220)orientations existed. And Cu grains grew in island growth mode from 873 K to 1173 K. As Tdepincreased,the conductivity of the film first increased and then decreased. The purest and aeneous Cu film with the best conductivity and high(111)preferred orientation was obtained at 1073 K. It was confirmed that 1073 K was the best deposition temperature for the preparation of copper films.

关 键 词：双(2 2 6 6-四甲基-3 5-庚二酮)化铜 Cu薄膜 化学气相沉积 沉积温度 (111)择优取向 

分 类 号：TN44[电子电信—微电子学与固体电子学]