化学气相沉积法在金属衬底上制备石墨烯及其H_(2)刻蚀的研究进展  

Research progress of chemical vapor deposition of graphene on metal substrate and its H_(2) etching

作　　者：王宇薇 王彬[2] WANG Yuwei;WANG Bin(College of Environmental Sciences,Jinzhou Normal College,Jinzhou 121000,China;College of Chemistry and Materials Engineering,Bohai University,Jinzhou 121013,China)

机构地区：[1]锦州师范高等专科学校环境科学学院,辽宁锦州121000 [2]渤海大学化学与材料工程学院,辽宁锦州121013

出　　处：《渤海大学学报（自然科学版）》2021年第2期111-118,共8页Journal of Bohai University:Natural Science Edition

基　　金：辽宁省科技厅指导项目(No:2019-ZD-0509).

摘　　要：自2004年首次亮相以来,石墨烯由于其优异的电学、光学、机械和化学性能引起了科学界极大的兴趣.目前,化学气相沉积(CVD)法是制备石墨烯的重要并且最有效的方法之一,利用CVD法制备的石墨烯在不同领域有着广泛的应用.本文分析了石墨烯在金属Ni和Cu衬底上的生长机理,介绍了在Cu衬底上利用CVD法制备石墨烯的研究进展.同时,阐述了石墨烯的H_(2)刻蚀现象及相关应用.研究石墨烯的H_(2)刻蚀,能够进一步理解石墨烯的生长机理,更好的促进石墨烯在微电子等领域的发展.Since it was discovered in 2004,graphene has attracted enormous interest due to its unique properties.Chemical vapor deposition(CVD)became the most significant and efficient method to synthesize graphene,and the CVD graphene has widespread application in different fields.In this account,we analyzed the growth mechanism of graphene grown on Ni and Cu substrate,and reviewed the research progress of the CVD graphene grown on Cu substrate briefly.In addition,we also reviewed the H_(2)etching of graphene.For the growth mechanism of graphene grown on metal substrate,we have a further understanding through studying the H_(2)etching.Meanwhile,the studying of etching on graphene also has certain significance for the application of graphene in the field of microelectronics.

关 键 词：化学气相沉积 石墨烯 刻蚀 研究进展 

分 类 号：O793[理学—晶体学]