InAs/GaSbⅡ类超晶格红外探测器光敏元蚀刻表面特性  

Fabrication and characteristics of InAs/GaSb Type-Ⅱsuperlattice infrared detector pixel mesas

作　　者：崔玉容 徐志成[1] 黄敏 许佳佳[1] 陈建新[1,2] 何力 CUI Yu-Rong;XU Zhi-Cheng;HUANG Min;XU Jia-Jia;CHEN Jian-Xin;HE Li(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2021年第4期427-431,共5页Journal of Infrared and Millimeter Waves

基　　金：国家重点研发计划(2016YFB0402403);国家自然科学基金(61974152,61904183,61534006);中国科学院青年创新促进会会员(2016219);上海市青年科技启明星项目(20QA141500)。

摘　　要：采用刻蚀技术形成台面结构的红外探测器光敏元,其表面漏电流和器件热稳定性与半导体蚀刻表面的特性密切相关。对制备的InAs/GaSbⅡ类超晶格中波红外探测器台面蚀刻区域特性进行了研究报道。通过台面结栅控结构和快速热退火相结合的实验研究,发现热退火处理使得样品在温度80 K,偏置电压-0.05 V下的暗电流密度从2.17×10^(-7) A/cm^(2)上升至6.96×10^(-5) A/cm^(2),并且有无退火样品的暗电流随偏置电压变化表现出明显的不同。退火导致光敏元台面侧壁电荷密度上升2.76×10^(12) cm^(-2),引起了表面漏电流的增加,利用X射线光电子能谱(XPS)发现退火后台面蚀刻区域Sb单质含量增加。The surface leakage current and thermal stability of the infrared detector are highly related to the sidewall sur‐face of the mesa.This work focused on researching the sidewalls'properties of InAs/GaSb Type-Ⅱ superlattice middle wavelength infrared detectors by gate-control techniques.It was found the I-V curves for samples with or without an‐nealing showed significant difference at 80 K,and the dark current density of the annealing sample increased from 2.17×10^(-7)A/cm^(2) to 6.96×10^(-5)A/cm^(2) comparing with the sample without annealing at the bias of-0.05 V.The results of gate-control experiment proved the surface fixed charge was increased by 2.76×10^(12) cm^(-2) after annealing,which caused severe surface tunneling leakage.And the XPS showed the elemental Sb increased after annealing.

关 键 词：二类超晶格 快速热退火 栅控结构 X射线光电子能谱 

分 类 号：TN304.2[电子电信—物理电子学] TN305