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作 者:江汉文 俞星星 薛名山[1] 彭同华 洪珍[1] 梁丹妮 JIANG Han-wen;YU Xing-xing;XUE Ming-shan;PENG Tong-hua;HONG Zhen;LIANG Dan-ni(School of Materials Scienceand Engineering,Nanchang Hangkong University,Nanchang 330063,China)
机构地区:[1]南昌航空大学材料科学与工程学院,南昌330063
出 处:《南昌航空大学学报(自然科学版)》2021年第2期51-60,共10页Journal of Nanchang Hangkong University(Natural Sciences)
基 金:国家自然科学基金(11864024,51662032);江西省研究生创新专项(YC2020-S531)。
摘 要:随着社会的发展和科学技术的进步,电子设备和仪器越来越趋向精密化、小型化和高性能化,而效能提升随即带来对导热散热的高需求。其中,碳化硅(SiC)由于具有良好的耐磨性、高温力学性、抗氧化性、宽带隙等特性,在半导体、核能、国防及空间技术等高科技领域具有广阔的应用前景。除此之外,SiC具有的高导热系数奠定了其在第三代半导体材料中的地位,促进了其在新一代芯片技术和导热散热技术领域的推广应用。本综述对SiC的晶体结构、导热机理和影响其导热性的多型体、二次相、晶体尺寸、孔隙率、温度等因素进行了分析,并讨论了SiC掺杂对导热性能的影响;总结了SiC作为导热材料的应用及其国内外最新研究进展,并展望了SiC作为导热材料的未来发展趋势。With the development of society and the progress of science and technology,electronic equipment and instruments are becoming more and more sophisticated,miniaturized and high-performance,and the high demand for heat conduction and heat dissipation caused by the improvement of efficiency has also attracted great attention from scientific researchers.Among them,silicon carbide(SiC)have been widely used in various high-tech fields such as semiconductors,nuclear energy,national defense and space technology due to its excellent wear resistance,high temperature mechanical properties,oxidation resistance,wide band gap and other characteristics.In view of the importance of the thermal conductivity of SiC,this review summarizes and discusses the crystal structure,thermal conduction mechanism,polymorphs,secondary phases,crystal size,porosity,temperature and other factors that affect the thermal conductivity of silicon carbide.The influence of SiC-doping with other substances on its thermal conductivity is discussed.The current research progress and application of SiC as the thermal conductive material are described.Finally,a reasonable prospect for the future development of SiC as the thermal conductive material is given.
关 键 词:碳化硅 导热机理 第三代半导体 陶瓷 导热散热材料
分 类 号:U458[建筑科学—桥梁与隧道工程]
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