20~26 GHz硅基氮化镓可变增益低噪声放大器  

A 20-26 GHz variable-gain low-noise amplifier using GaN-on-Si technology

作　　者：江兰兰 陈宏尘 朱浩慎 冯文杰 车文荃[1,2] 薛泉 JIANG Lanlan;CHEN Hongchen;ZHU Haoshen;FENG Wenjie;CHE Wenquan;XUE Quan(School of Electronic and Information Engineering/Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz,South China University of Technology,Guangzhou 510641;Intelligent Sensing and Wireless Transmission Center,Pazhou Laboratory,Guangzhou 510330;School of Electronic and Optical Engineering,Nanjing University of Science&Technology,Nanjing 210094)

机构地区：[1]华南理工大学电子与信息学院/广东省毫米波与太赫兹重点实验室,广州510641 [2]琶洲实验室智能感知与无线传输中心,广州510330 [3]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《南京信息工程大学学报（自然科学版）》2021年第4期413-419,共7页Journal of Nanjing University of Information Science & Technology（Natural Science Edition）

基　　金：国家重点研发计划(2018YFB1802002);广东省“珠江人才计划”引进创新创业团队项目(2017ZT07X032)。

摘　　要：基于100 nm硅基氮化镓(GaN)工艺,本文设计并实现了一款工作频段为20~26 GHz且增益平坦的可变增益低噪声放大器(VGLNA).该放大器采用三级共源级级联来实现高增益,并通过调节第二、第三级的栅极偏置实现增益控制.测试结果表明,该放大器在工作频段内实现了超过20 dB的增益可变范围和±1.5 dB的增益平坦度,在增益可变范围内功耗为126 mW至413 mW.在最大增益状态下,该放大器在整个频段内可实现大于20 dB的小信号增益且噪声系数(NF)为2.95 dB至3.5 dB,平均输出1dB压缩点(OP1dB)约为14.5 dBm.该芯片的面积为2 mm^(2).Based on 100 nm GaN-on-Si MMIC technology,this paper presents the design of a 20-26 GHz Variable-Gain Low-Noise Amplifier(VGLNA).This LNA adopts a three-stage common source topology and realizes gain control by adjusting the gate bias of the second and third stages.The test results show that the amplifier achieves a>20 dB gain tuning range and a±1.5 dB gain flatness within the working frequency range,and dissipates power from 126 mW to 413 mW.When biased with a-1.1 V gate voltage and 3.5 V drain voltage,the amplifier achieves a small-signal gain of more than 20 dB in the whole band,a Noise Figure(NF)ranging from 2.95 dB to 3.5 dB,and an average output 1dB compression point(OP1dB)around 14.5 dBm.The chip area is 2 mm^(2).

关 键 词：GaN HEMT 微波单片集成电路 低噪声放大器 可变增益放大器 

分 类 号：TN43[电子电信—微电子学与固体电子学]