表面电荷对GaN基HEMT器件输运特性影响的研究  

Study on the Effect of Surface Charge on Transport Properties of GaN Based HEMT Devices

作　　者：潘传真 陈鹏[1] 徐儒 丰建波 赵红[1] 施毅[1] 张荣[1] 郑有炓[1] PAN Chuanzhen;CHEN Peng;XU Ru;FENG Jianbo;ZHAO Hong;SHI Yi;ZHANG Rong;ZHENG Youdou(Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology,School of Electronic Science and Engineering,Nanjing University,Nanjing,210093,CHN)

机构地区：[1]南京大学电子科学与工程学院江苏省光电功能材料重点实验室,南京210093

出　　处：《固体电子学研究与进展》2021年第4期251-257,共7页Research & Progress of SSE

基　　金：国家重点基础研究发展计划资助项目(2016YFB0400102);集成光电子学国家重点实验室开放课题(IOSKL2017KF03);国网山东省电力公司电力科学研究院研发基金资助项目。

摘　　要：使用ATLAS(silvaco)仿真软件研究了不同表面电荷对GaN HEMT器件输运性能的影响。通过改变表面正电荷浓度大小从10^(12)cm^(-2)增加至3×1013cm^(-2),器件击穿电压先快速减小,后趋于平缓。随表面负电荷浓度大小从10^(12)cm^(-2)增加至3×1013cm^(-2),其击穿电压先快速增加,后趋于不变。在同样设定的表面电荷状态下,随表面正电荷浓度增加,其漏极饱和电流先快速增加,后趋于不变,相较于无表面电荷时,漏极饱和电流最大增加了7.3%。随表面负电荷浓度增加,其漏极饱和电流先快速减小,后趋于不变,相较于无表面电荷时,漏极饱和电流最大减小了88.7%。结果表明,当表面为负电荷时,对器件输出特性影响较大。当表面电荷浓度达到-1013cm^(-2),能够使漏极饱和电流大大降低,为基于GaN HEMT的探测器/传感器设计提供了理论支撑。The effect of surface charge on the transport performance of GaN HEMT devices was analyzed using ATLAS(silvaco)simulation.By changing the surface positive charge concentration from 10^(12)cm^(-2) to 3×1013cm^(-2),the breakdown voltage of the device decreases rapidly with the increase of surface positive charge concentration,and then tends to be flat.As the surface negative charge concentration increases from 10^(12)cm^(-2) to 3×1013cm^(-2),the breakdown voltage first increases rapidly and then tends to be flat.Under the same set surface charge state,the drain saturation current first increases rapidly with the increase of surface positive charge concentration and then tends to remain unchanged.Compared with without surface charge,the drain saturation current increases by 7.3%at the maximum.As the surface negative charge concentration increases,its drain saturation current decreases rapidly first,and then tends to remain unchanged.Compared with without surface charge,the drain saturation current reduces by 88.7%at the maximum.The drain saturation current can be greatly reduced when the surface charge concentration reaches-1013cm^(-2),which provides theoretical support for the design of GaN HEMT-based detectors/sensors.

关 键 词：GaN基高电子迁移率晶体管 表面电荷 二维电子气 击穿特性 输出特性 

分 类 号：TN386[电子电信—物理电子学]