1310nm大功率高偏振度量子阱超辐射发光二极管  

1 310nm Quantum-well Superluminescent Diode with High Power and High Degree of Polarization

作　　者：周帅 许瑨 田坤[1] 张靖[1] 庞福滨 刘尚军 任涛 廖柯[1] ZHOU Shuai;XU Jin;TIAN Kun;ZHANG Jing;PANG Fubin;LIU Shangjun;REN Tao;LIAO Ke(Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN;State Grid Jiangsu Electric Power Co.Ltd.,Nanjing 210024,CHN;Electric Power Research Institute of State Grid Jiangsu Electric Power Co.Ltd.,Nanjing 211103,CHN)

机构地区：[1]重庆光电技术研究所,重庆400060 [2]国网江苏省电力有限公司,南京210024 [3]国网江苏省电力有限公司电力科学研究院,南京211103

出　　处：《半导体光电》2021年第4期483-487,共5页Semiconductor Optoelectronics

基　　金：国家电网有限公司科技项目(5700-202018483A-0-0-00)。

摘　　要：设计并制备了一种斜条脊波导结构压应变高偏振度多量子阱超辐射发光二极管。设计的脊波导出光面TiO_(2)/SiO_(2)四层宽带增透膜的TE模式反射率约为10-6,分析了脊波导角度偏差和膜层厚度偏差对增透膜反射率的影响。实验结果表明,在250mA直流电流驱动下,所设计的超辐射发光二极管芯片单管输出功率可达22.7mW,出射光谱FWHM约为37.3nm,光谱纹波系数低于0.15dB,TE模式输出光强占主导,偏振度约为19.2dB。Ridge-waveguide superluminescent diodes(SLD)with compressive strain multiquantum-well were designed and fabricated.The TE mode reflectivity of the TiO_(2)/SiO_(2) fourlayer broadband antireflection film is about 10-6,and the effects of the deviation of the angle of the ridged waveguide and the thickness of the film on the reflectivity of the antireflection film are analyzed.The experimental results show that the single-tube output power of the designed SLD chip can reach 22.7 mW,the output spectrum FWHM is about 37.3 nm,the spectral ripple coefficient is less than 0.15 dB,and the TE mode output intensity is dominant with a polarization degree of about 19.2 dB under 250 mA DC current.

关 键 词：压应变多量子阱 超辐射发光二极管 增透膜 偏振度 

分 类 号：O484.5[理学—固体物理]