上海光源极紫外光刻胶检测平台  

Extreme Ultraviolet Photoresist Inspection Platform in Shanghai Synchrotron Radiation Facility

作　　者：赵俊 杨树敏 薛超凡 吴衍青 陈宜方 邰仁忠 ZHAO Jun;YANG Shu-Min;XUE Chao-Fan;WU Yan-Qing;CHEN Yi-Fang;TAI Ren-Zhong(School of Informnation Science and Technology,Fudan University,Shanghai 200433,China;Shanghai Synchrotron Radiation Facility,Shanghai Advanced Research Institute,Chinese Academy of Sciences,Shanghai 201204,China)

机构地区：[1]复旦大学信息科学与工程学院,上海200433 [2]中国科学院上海高等研究院,上海光源,上海201204

出　　处：《应用化学》2021年第9期1168-1174,共7页Chinese Journal of Applied Chemistry

基　　金：国家重点研发计划(Nos.2017YFA0206001,2016YFA0401302,2017YFA0403400);国家自然科学基金项目(No.11775291,11875314)资助。

摘　　要：极紫外光刻技术作为下一代光刻技术,被行业赋予了拯救摩尔定律的使命。极紫外光刻胶是极紫外光刻技术的核心子技术之一,其分辨率、粗糙度、灵敏度以及放气情况等指标的检测是开展极紫外光刻胶研发的必要条件和实现极紫外光刻胶配方优化的重要环节。基于同步辐射的极紫外干涉光刻技术是目前最适合开展的一种用于极紫外光刻胶性能检测的方法。上海光源根据相关的研发需求,已建立了一个基于该方法的极紫外光刻胶检测平台。通过不断改善装置的稳定性,发展自主的分束光栅掩膜制作技术,以及不断摸索和优化相应的干涉曝光工艺,目前检测平台的曝光分辨率测试水平已能达到20 nm以下,基本满足极紫外光刻7 nm工艺节点的相应要求。As the next generation of lithography technology,extreme ultraviolet lithography has been given the mission of saving Moore′s law by the industry.Extreme ultraviolet photoresist is one of the core sub-technologies of extreme ultraviolet lithography.The inspection of its resolution,roughness,sensitivity and outgassing conditions is a necessary condition for the development of extreme ultraviolet photoresist and it is also an important part to optimize the resist performance.Extreme ultraviolet interference lithography based on synchrotron radiation is currently the most suitable method for testing the performance of extreme ultraviolet photoresist.According to related research and development needs,an extreme ultraviolet photoresist inspection platform based on this method has been established in Shanghai Synchrotron Radiation Facility(SSRF).By continuously improving the stability of the device,developing independent beam splitting grating mask manufacturing technology,and constantly exploring and optimizing the corresponding interference exposure process,the current inspection resolution has reached below 20 nm,which basically meets the corresponding requirements for the 7 nm process node of extreme ultraviolet lithography.

关 键 词：极紫外 光刻胶检测 干涉光刻 

分 类 号：O652.2[理学—分析化学]