二氧化碳基聚碳酸环己撑酯电子束光刻胶显影工艺优化  

Optimization of Development Process for Carbon Dioxide-Based Poly(cyclohexene carbonate)Electron Beam Resist

作　　者：陆新宇 马彬泽 罗皓 齐欢 李强[2] 伍广朋 LU Xin-Yu;MA Bin-Ze;LUO Hao;QI Huan;LI Qiang;WU Guang-Peng(MOE Laboratory of Macromolecular Synthesis and Frunctionalization,Department of Polymer Science and Engineering,Zhejiang University,Hangzhou 310027,China;State Key Laboratory of Modern Optical Instrumentation,College of Optical Science and Engineering,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]浙江大学高分子科学与工程学系,高分子合成与功能构造教育部重点实验室,杭州310007 [2]浙江大学光电科学与工程学院,现代光学仪器国家重点实验室,杭州310007

出　　处：《应用化学》2021年第9期1189-1198,共10页Chinese Journal of Applied Chemistry

基　　金：国家自然科学基金(Nos.91956123,51973186,21674090);国家重点研发计划(No.2017YFE0100200);浙江省杰出青年科学基金(No.R21B040004)资助。

摘　　要：电子束光刻是下一代光刻技术中的有力竞争者,在微纳加工尤其是光刻掩膜制造上具有显著的竞争优势。开发高性能的光刻胶并优化出最佳的显影条件和工艺是提升电子束光刻效率的基础。本文在前期开发出的二氧化碳基聚碳酸酯电子束光刻胶的基础上,进一步探究了正性聚碳酸环己撑酯(PCHC)胶的显影条件对电子束光刻性能的影响,具体研究了显影剂以及显影温度和时间等工艺条件,筛选出了最优显影剂正己烷,最佳显影温度0℃,最佳显影时间30 s。在该条件下,PCHC的灵敏度和对比度分别为208μC/cm2和3.06,并实现了53 nm的分辨率,超过了当下广泛使用的PMMA-950k电子束光刻胶,有望为科研院所和半导体加工车间提供一种性能优异、成本低廉的新型电子束光刻胶。Electron beam lithography(EBL)is a promising candidate for the next-generation lithography,which has a significant competitive advantage in micro/nano fabrication,especially in lithography mask manufacturing.Development is one of the most critical steps in the lithography procedure.The development of high-performance photoresists and optimization of the best developing conditions are the basis of improving the efficiency of electron beam lithography.Based on the previous studies on carbon dioxide(CO2)-based polycarbonate resists,herein,we further explore the positive CO2-based poly(cyclohexene carbonate)(PCHC)and its electron beam lithography performance according to development process.The effects of development conditions,including developer,developing temperature and time were systematically explored.The optimal developer(n-hexane),and developing condition(0℃/30 s)were screened out,under which,the sensitivity,contrast,and resolution of PCHC are 208μC/cm2,3.06,and 53 nm,respectively.This performance is better than that of the commercial PMMA-950 k EBL resist(with a resolution of 62 nm)under the same exposure conditions.We hope this study could provide a new type of electron beam resist with excellent performance and low cost for scientific research institutes and semiconductor fabrication.

关 键 词：二氧化碳 聚碳酸酯 电子束光刻 光刻胶 显影条件 高分辨率 

分 类 号：O644.2[理学—物理化学]