Ga_(2)O_(3)材料的掺杂研究进展  

Progress of Doping in Ga_(2)O_(3) Materials

作　　者：王丹 王晓丹[1] 马海 陈华军 毛红敏[1] 曾雄辉[2] Wang Dan;Wang Xiaodan;Ma Hai;Chen Huajun;Mao Hongmin;Zeng Xionghui(Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou,Jiangsu 215009,China;Suzhou Institute of Nanotechnology and Nano-Bionics,Chinese Academy of Sciences,Suzhou,Jiangsu 215123,China)

机构地区：[1]苏州科技大学物理科学与技术学院,江苏省微纳热流技术与能源应用重点实验室,江苏苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《激光与光电子学进展》2021年第15期306-312,共7页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61974158,61306004);江苏省自然科学基金(BK20191456);江苏省“十三五”重点学科(20168765);江苏省研究生科研与实践创新(KYCX19_2017)。

摘　　要：相比于第三代半导体材料碳化硅(SiC)和氮化镓(GaN),氧化镓(Ga_(2)O_(3))具有禁带宽度更大、击穿电场更强、吸收截止边更短、生长成本更低等优点。掺杂是一种高效优化材料物性特征的方法,可以拓宽Ga_(2)O_(3)在不同领域的应用范围。本文对近年来Ga_(2)O_(3)材料的稀土掺杂以及其他元素的掺杂进行了综述,着重分析了稀土掺杂Ga_(2)O_(3)的发光特性。最后,对Ga_(2)O_(3)的稀土离子掺杂和p型掺杂方向进行了展望。Compared with silicon carbide(SiC) and gallium nitride(GaN), gallium oxide(Ga_(2)O_(3)) has the advantages of larger band gap width, stronger breakdown field strength, larger absorption cutoff edge, and lower growth cost.Doping technique is an effective method of optimizating physical properties of materials, which can broaden the application of Ga_(2)O_(3) in different fields. In this paper, the progress of rare earth and other elements doped Ga_(2)O_(3) in recent years are reviewed and the luminescence characteristics of rare earth doped Ga_(2)O_(3) are analyzed. Finally, the research direction of rare earth doped Ga_(2)O_(3) and p-type Ga_(2)O_(3) are prospected.

关 键 词：材料 半导体材料 氧化镓 离子掺杂 发光特性 电导率 

分 类 号：O474[理学—半导体物理]