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作 者:唐亮[1,2] 刘陵恩 徐晋勇 张宜旭[2] 王永峰 张跃飞 张泽[3] TANG Liang;LIU Ling-en;XU Jin-yong;ZHANG Yi-xu;WANG Yong-feng;ZHANG Yue-fei;ZHANG Ze(School of Mechanical and Electrical Engineering,Guilin University of Electronic Technology,Guilin Guangxi 541004;Institute of Microstructure and Property of Advanced Materials,Beijing University of Technology,Beijing 100124;School of Materials Science and Engineering,Zhejiang University,Hangzhou Zhejing 310027,China)
机构地区:[1]桂林电子科技大学机电工程学院,广西桂林541004 [2]北京工业大学固体微结构与性能研究所,北京100124 [3]浙江大学材料科学与工程学院,浙江杭州310027
出 处:《电子显微学报》2021年第5期601-608,共8页Journal of Chinese Electron Microscopy Society
基 金:国家自然科学基金基础科学中心项目(No.51988101);北京市教委科技计划重点项目(No.KZ202110005006)。
摘 要:扫描电子显微镜(SEM)真空腔室内原位加热实验,当温度超过700℃以后,受到热电子的影响,导致扫描电子显微镜扫描成像质量下降,具体表现为产生条纹状的亮纹。针对这一问题,开展对扫描电子显微镜二次电子探测系统及二次电子成像的分析与研究,详细论述了高温下干扰扫描电子显微镜二次电子成像质量的影响因素,并设计出扫描电子显微镜的二次电子成像调节以及图像修复系统。该系统可分为热电子检测、扰动数据获取、图像修复等部分,采用电位检测并实时修改亮纹对应位置的亮度,可实现对被热电子干扰的图像进行主动的亮度补偿,从而实现图像修复的目的。实验结果表明,当样品温度达到1000℃后扫描电镜仍能获得清晰的二次电子图像信息。In situ heating experiment in the vacuum chamber of scanning electron microscopy(SEM),when the temperature exceeds 700℃,SEM image quality decreases dramatically due to the influence of thermoelectrons,which is specifically manifested as striped bright lines.To solve this problem,the secondary electron detection system and secondary electron imaging are analyzed and studied.The influencing factors that interfere with the quality of secondary electron imaging at high temperature are discussed in detail,and an image-inpainting system that can adjust the secondary electron imaging is designed.The system can be divided into thermoelectrons detection,disturbance data acquisition,image inpainting and other parts.By using potential detection and modifying the brightness of the corresponding position of bright lines in real time,active brightness compensation of the image disturbed by thermoelectrons can be realized,thus achieving the purpose of image inpainting.The experimental results show that the clear secondary electron imaging information can be obtained by SEM when the temperature of the sample reaches 1000℃.
分 类 号:TN16[电子电信—物理电子学] TG115.215.3[金属学及工艺—物理冶金]
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