导通类型可调的无掺杂MOS场效应晶体管  

An Undoped MOSFET with Adjustable Conduction Type

作　　者：李权 靳晓诗[1] LI Quan;JIN Xiaoshi(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2021年第5期9-11,共3页Microprocessors

摘　　要：针对传统场效应晶体管在某些领域上的局限性,提出一种导通类型可调且无掺杂的新型MOS场效应晶体管,可以在不同栅压条件下作为不同类型的MOS场效应晶体管使用,实现不同工作条件下由N-MOSFET到P-MOSFET的相互转换。新器件采用非单一控制栅设计,具有双侧对称浮动栅极结构,作为改变场效应管导通类型的的控制端。通过改变控制栅的电位高低来改变正向导通电流与反向漏电流的大小,实现更小的漏电流和更大的导通电流。通过仿真对新器件的工作情况展开分析,并对设计参数进行优化。In view of the limitations of traditional FETs in some occasions,a new type of MOS field effect transistor with adjustable conduction type and no doping is proposed,which can be used as different types of MOSFETs under different gate voltages and realize the mutual conversion from N-MOSFET to P-MOSFET under different working conditions.The new device adopts a non-single control gate design,and has a bilaterally symmetrical floating gate structure,which is used as the control terminal for changing the conduction type of the FET.By changing the potential of the control gate,the forward conduction current and reverse leakage current can be changed,thus realizing smaller leakage current and larger conduction current.The working of the new device is analyzed by simulation,and the design parameters are optimized.

关 键 词：浮动栅极 导电类型可调 场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]