不同浓度的Si掺杂β-Ga_(2)O_(3)薄膜的制备及研究  

Preparation and Study of Si-doped β-Ga_(2)O_(3) Thin Films with Different Content

作　　者：张晓霞[1] 邓金祥[1] 孔乐 李瑞东 杨子淑 张杰[1] ZHANG Xiao-xia;DENG Jin-xiang;KONG Le;LI Rui-dong;YANG Zi-shu;ZHANG Jie(Faculty of Science,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学理学部,北京100124

出　　处：《真空》2021年第5期57-61,共5页Vacuum

基　　金：北京市自然科学基金(No.4192016)资助。

摘　　要：本文采用射频磁控溅射法在Si(100)和石英衬底制备纯β-Ga_(2)O_(3)和不同浓度的Si掺杂β-Ga_(2)O_(3)薄膜,并且研究Si掺杂对β-Ga_(2)O_(3)薄膜结构、表面形貌和光学性质的影响。X射线衍射(XRD)测试结果表明,Si掺杂β-Ga_(2)O_(3)薄膜都未出现新的衍射峰,随着Si浓度的增加,β-Ga_(2)O_(3)的特征峰(111)逐渐向大角度方向移动。X射线光电子能谱(XPS)表明β-Ga_(2)O_(3)薄膜中成功掺入了Si元素。本文使用原子力显微镜(AFM)表征薄膜的表面形貌,结果表明薄膜表面的粗糙度随着Si浓度增加呈现单调递增的趋势。紫外-可见光(UV-visible)透射光谱表明薄膜均在可见光波段具有高透光率,薄膜的光学带隙随Si掺杂浓度的变大而变大。Si掺杂实现了β-Ga_(2)O_(3)的带隙可调,表明Si是一种有潜力的掺杂剂。In this work,pureβ-Ga_(2)O_(3)and Si-dopedβ-Ga_(2)O_(3)thin films with different content were grown on Si(100)substrate and quartz substrate by radio frequency magnetron sputtering to study the influence of Si doping on the structure,surface morphology and optical properties ofβ-Ga_(2)O_(3).The X-ray diffraction results showed that no new diffraction peaks were observed in all Si-dopedβ-Ga_(2)O_(3)films,and the(111)diffraction peak gradually moved towards a larger angle with the increase of Si concentration.The X-ray photoelectron spectroscopy results indicated that Si was successfully doped inβ-Ga_(2)O_(3)films.The atomic force microscopy was used to study the surface morphology of films,and the results suggestedthat the roughness of films increased monotonously with the increase of Si content.The UV-visible light transmission spectrum tests showed that all films had the advantage of high transparency in visible region,while the optical band gap got larger with Si content increased.The band gap ofβ-Ga_(2)O_(3)film can be adjusted after Si doping,which indicates Si is a potential dopant.

关 键 词：射频磁控溅射 Si掺杂β-Ga_(2)O_(3)薄膜 带隙宽度 结构 

分 类 号：O469[理学—凝聚态物理] TB43[理学—电子物理学]