一种微波功率管电路低空洞率共晶贴片工艺研究  

Process Study on Low Cavity Rate Eutectic Die Attach of Microwave Power Transistor Circuit

作　　者：金龙 周冬莲 车勤 李杰 徐娟 JIN Long;ZHOU Dong-lian;CHE Qin;LIJie;XU Juan(No.214 Research Institute of CNIGC Ltd.,Suzhou 215163,China)

机构地区：[1]中国兵器工业第214研究所,苏州215163

出　　处：《混合微电子技术》2020年第4期63-67,共5页Hybrid Microelectronics Technology

摘　　要：针对一种微波功率管电路的共晶贴片时AuSi、AuSn摩擦共晶的贴片压力、摩擦圈数、摩擦幅度、贴片overtravel(超程)等工艺参数对贴片效果的影响,进行了实验、检测和分析。结果表明:以上参数对AuSi、AuSn共晶贴片的合格率均有显著影响;在贴片压力为50gf,AuSi、AuSn共晶贴片摩擦圈数分别为35圈、10圈,AuSi,AuSn共晶贴片摩擦幅度分别为50μm、80μLm,贴片超程为45μm时,可以实现较高的焊接质量和合格率;X射线检测共晶贴片良品的空洞率很低,焊透率超过95%。The influences of process parameters such as die attach pressure,friction circle number,friction amplitude,die attach over travel,etc.of AuSi and AuSn friction eutectic welding on the eutectic die attach effects of a microwave power transistor circuit were experimented,inspected and analyzed.The results showed that all the above-mentioned parameters have great effect upon the pass rate of AuSi and AuSn eutectic die attach;better welding quality and higher pass rate can be reached when die attach pressure is 50gf,friction circle number of AuSi eutectic die attach is 35 and which of AuSn is 10,friction amplitude of AuSi eutectic die attach is 50μm and which of AuSn is 80μm,die attach overt ravel is 45μm;the eutectic die attach passed circuits have very low cavity rate and so their welding penetration rates are over 95%.

关 键 词：微波功率管 共晶贴片 空洞率 

分 类 号：TN305[电子电信—物理电子学]