低噪声InGaAs/InP雪崩光电二极管的模拟分析  

Simulation Analysis of Low-Noise InGaAs/InP Avalanche Photodiodes

作　　者：崔星宇 林逢源 张志宏 唐吉龙 方铉 房丹 王登魁 李科学 魏志鹏 Cui Xingyu;Lin Fengyuan;Zhang Zhihong;Tang Jilong;Fang Xuan;Fang Dan;Wang Dengkui;Li Kexue;Wei Zhipeng(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun,Jilin 130022,China)

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《中国激光》2021年第17期10-16,共7页Chinese Journal of Lasers

基　　金：国家自然科学基金(61674021,11674038,61704011,61904017,11804335,12074045);吉林省科学技术发展项目(20200301052RQ);吉林省教育厅项目(JJKH20200763KJ)。

摘　　要：提出了一种吸收区-电荷区-倍增区分离(SACM)结构的InGaAs/InP雪崩光电二极管,利用碰撞电离工程(I^(2)E)设计了双电荷层双倍增层结构的InP雪崩光电二极管(APD),通过在倍增区中设置电离阈值能量的分级,控制碰撞电离的位置,从而降低噪声。采用器件仿真器Silvaco对器件进行建模,仿真计算了新结构器件的能带结构、电场分布、暗电流、光响应电流和增益等。新结构器件可以获得较低的噪声系数k(k=α/β,其中α、β分别为空穴与电子的电离系数),在30 V电压下,k=0.15。与常规的SACM InP APD相比,分析结果表明,新结构APD器件具有了较好的噪声特性。Objective At present,the main research is focused on lower-noise and higher-gain-bandwidth product of an APD in order to adapt to the evolving optical fiber communication systems.Usually,lower noise is related to higher speed,because a high gain tail can result in higher noise and longer transmission time in the gain distribution.Therefore,a major issue is how to effectively reduce noises in the APD research.An effective way to reduce noises is using beneficial heterojunction structures to impact ionization engineering(I^(2)E)design.A heterojunction structure is used in this method to provide spaces with different ionization threshold energies.This structure is more localized than the impact ionization that can be achieved in a spatially uniform structure.Through impacting ionization engineering,it has been achieved in the GaAs/AlGaAs material system with ultra-low noise of k=0.1.Now we have known that the heterojunction structure can reduce the multiplication noise of an APD by controlling the spatial separation of electrons and holes.There is a specific design which is to place a thin narrow band gap layer with a lower threshold energy adjacent to a wider band gap layer with a higher threshold energy,so that more ionization events occur in the thin narrow band gap layer with a lower threshold energy.At present,the first choice is the use of InGaAs/InP APD detectors for optical fiber communication.Because InP material has the advantages of large electron-hole ionization ratio k and low excess noise.In addition,the lattice constants of InP and In_(0.53)Ga_(0.47)As are very small.High quality extension can be realized by molecular beam epitaxy(MBE)and metal organic chemical vapor deposition(MOCVD).Here,we design InP/InGaAsP SACM APD through impact ionization engineering.An InGaAsP multiplication layer is inserted into the multiplication layer of a traditional InP-based APD,and there are two regions with different ionization threshold energies in the multiplication layer to make ionization events occur more intensi

关 键 词：材料 INGAAS/INP 碰撞电离工程(I^(2)E) 吸收区-电荷区-倍增区分离 电离阈值能量 过剩噪声 

分 类 号：O472[理学—半导体物理]