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作 者:周斌[1] 陈思 王宏跃 付志伟 施宜军 杨晓锋 曲晨冰 时林林 ZHOU Bin;CHEN Si;WANG Hongyue;FU Zhiwei;SHI Yijun;YANG Xiaofeng;QU Chenbing;SHI Linlin(Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,The Fifth Electronic Research Institute,Ministry of Industry and Information Technology,Guangzhou 511370,China)
机构地区:[1]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术国家级重点实验室,广州511370
出 处:《电子与封装》2021年第10期110-118,共9页Electronics & Packaging
基 金:国家自然科学基金青年基金(62004046,61804032);广东省基础与应用基础研究基金(2021A1515012007)。
摘 要:随着智能移动、智能汽车、物联网、可穿戴设备等市场的快速增长,兼具信号感知、信号处理、信令执行和赋能等多功能集成的微系统技术成为业界关注的焦点。在深度摩尔和超越摩尔的共同推动下,微系统技术正呈现出工艺节点不断缩小、集成密度不断提高、结构框架软硬一体、失效机制交叉融合、分析技术更新迭代等全新特征,新结构、新工艺的引入带来了新的可靠性问题,使得部分原有可靠性表征方法不再适用。针对基于异质异构集成微系统技术的可靠性问题,综述了国内外研究进展,提出了亟需解决的若干问题和表征方法,如热、力学可靠性问题,多尺度、多场耦合问题,微纳工艺、结构的性能表征和退化问题,微系统可靠性评价问题,电磁、辐照、极低温等特殊环境下的适应性问题。With the rapid growth of intelligent mobile,intelligent vehicles,internet of things,wearable devices and other markets,the microsystem technology which has multiple functions of signal perception,signal processing,signaling execution and enabling has become the focus of the industry.Under the promotion of more Moore and beyond Moore,microsystem technology is showing new characteristics such as the process node shrinking,the integration density increasing,the structure frame integrated,cross-integration of failure mechanisms,update and iteration of analysis technologies,etc.The introduction of new structure and new technology brings new reliability issues,making the original partial reliability characterization methods no longer applicable.Focusing on the reliability of heterogeneous integrated microsystem,the research progress is reviewed,and some reliability issues and characterization methods that need to be solved urgently in terms of multi-scale and multi field coupling,thermal analysis and thermal management,micro/nano process performance characterization and microsystem reliability evaluation are put forward.
分 类 号:TN305.94[电子电信—物理电子学]
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