Imaging the influence of oxides on the electrostatic potential of photovoltaic InP nanowires  

作　　者：Lukas Hrachowina Xianshao Zou Yang Chen Yuwei Zhang Enrique Barrigón Arkady Yartsev Magnus T.Borgström 

机构地区：[1]NanoLund,Lund University,Box 118,22100,Lund,Sweden [2]Divison of Solid State Physics,Lund University,Box 118,22100,Lund,Sweden [3]Divison of Chemical Physics,Lund University,Box 124,22100,Lund,Sweden [4]Toyota Technological Institute,Nagoya,Aichi 468-8511,Japan

出　　处：《Nano Research》2021年第11期4087-4092,共6页纳米研究（英文版）

摘　　要：Nanowires require surface passivation due to their inherent large surface to volume ratio. We investigate the effect of embedding InP nanowires in different oxides with respect to surface passivation by use of electron beam induced current measurements enabled by a nanoprobe based system inside a scanning electron microscope. The measurements reveal remote doping due to fixed charge carriers in the passivating PO_(x)/Al_(2)O_(3) shell in contrast to results using SiO_(x). We used time-resolved photoluminescence to characterize the lifetime of charge carriers to evaluate the success of surface passivation. In addition, spatially resolved internal quantum efficiency simulations support and correlate the two applied techniques. We find that atomic-layer deposited PO_(x)/Al_(2)O_(3) has the potential to passivate the surface of InP nanowires, but at the cost of inducing a field-effect on the nanowires, altering their electrostatic potential profile. The results show the importance of using complementary techniques to correctly evaluate and interpret processing related effects for optimization of nanowire-based optoelectronic devices.

关 键 词：InP nanowires OXIDES MOVPE electron beam induced current(EBIC) time-resolved photoluminescence(TRPL) FIELD-EFFECT 

分 类 号：TB383[一般工业技术—材料科学与工程]